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PDF NSBA123JDP6 Data sheet ( Hoja de datos )
| Número de pieza | NSBA123JDP6 | |
| Descripción | Dual PNP Bias Resistor Transistors | |
| Fabricantes | ON Semiconductor | |
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MUN5135DW1,
NSBA123JDXV6,
NSBA123JDP6
Dual PNP Bias Resistor
Transistors
R1 = 2.2 kW, R2 = 47 kW
PNP Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base−emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
• S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(TA = 25°C, common for Q1 and Q2, unless otherwise noted)
Rating
Symbol
Max
Unit
Collector−Base Voltage
VCBO
50
Vdc
Collector−Emitter Voltage
VCEO
50
Vdc
Collector Current − Continuous
IC 100 mAdc
Input Forward Voltage
VIN(fwd)
12
Vdc
Input Reverse Voltage
VIN(rev)
5
Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device
Package
Shipping†
MUN5135DW1T1G,
NSVMUN5135DW1T1G
SOT−363
3,000 / Tape & Reel
NSBA123JDXV6T5G
SOT−563
8,000 / Tape & Reel
NSBA123JDP6T5G
SOT−963
8,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
March, 2015 − Rev. 1
1
www.onsemi.com
PIN CONNECTIONS
(3) (2) (1)
R1
Q1
R2 R1
(4) (5)
R2
Q2
(6)
MARKING DIAGRAMS
6
0M M G
G
1
SOT−363
CASE 419B
0M M G
G
1
SOT−563
CASE 463A
MG
1G
SOT−963
CASE 527AD
0M/P
M
G
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
Publication Order Number:
DTA123JD/D
1 page  
MUN5135DW1, NSBA123JDXV6, NSBA123JDP6
TYPICAL CHARACTERISTICS
NSBA123JDP6
1
IC/IB = 10
25°C
150°C
0.1
−55°C
1000
VCE = 10 V
100
25°C
10
150°C
−55°C
0.01
0
10 20 30 40
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) vs. IC
1
50 0.1
1 10
IC, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
100
7 100
f = 10 kHz
6
IE = 0 A
TA = 25°C
150°C
10
5
−55°C
41
3 25°C
0.1
2
0.01
1
0 0.001
0 10 20 30 40 50
0
VR, REVERSE BIAS VOLTAGE (V)
VO = 5 V
12
Vin, INPUT VOLTAGE (V)
3
Figure 9. Output Capacitance
Figure 10. Output Current vs. Input Voltage
100
10
25°C
−55°C
1
0.1
0
150°C
VO = 0.2 V
10 20 30 40
IC, COLLECTOR CURRENT (mA)
50
Figure 11. Input Voltage vs. Output Current
www.onsemi.com
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| PDF Descargar | [ Datasheet NSBA123JDP6.PDF ] | |
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