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PDF STP45N60DM2AG Data sheet ( Hoja de datos )

Número de pieza STP45N60DM2AG
Descripción N-channel Power MOSFET
Fabricantes STMicroelectronics 
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No Preview Available ! STP45N60DM2AG Hoja de datos, Descripción, Manual

STP45N60DM2AG
Automotive-grade N-channel 600 V, 0.085 Ω typ., 34 A
MDmesh™ DM2 Power MOSFET in a TO-220 package
Datasheet - production data
Features
Order code
STP45N60DM2AG
VDS @
TJmax.
650 V
RDS(on)
max.
0.093 Ω
ID PTOT
34 A 250 W
Figure 1: Internal schematic diagram
Designed for automotive applications and
AEC-Q101 qualified
Fast-recovery body diode
Extremely low gate charge and input
capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications
Order code
STP45N60DM2AG
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Table 1: Device summary
Marking
Package
Packing
45N60DM2
TO-220
Tube
July 2015
DocID028065 Rev 1
This is information on a product in full production.
1/13
www.st.com

1 page




STP45N60DM2AG pdf
STP45N60DM2AG
Symbol
ISD
ISDM(1)
VSD(2)
trr
Qrr
IRRM
trr
Qrr
IRRM
Parameter
Table 8: Source-drain diode
Test conditions
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery
charge
Reverse recovery
current
VGS = 0 V, ISD = 34 A
ISD = 34 A, di/dt = 100 A/µs,
VDD = 60 V (see Figure 16:
"Test circuit for inductive
load switching and diode
recovery times")
Reverse recovery time
Reverse recovery
charge
Reverse recovery
current
ISD = 34 A, di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C (see
Figure 16: "Test circuit for
inductive load switching and
diode recovery times")
Notes:
(1) Pulse width is limited by safe operating area.
(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
Electrical characteristics
Min.
-
-
-
-
-
Typ.
120
0.6
Max. Unit
34 A
136 A
1.6 V
ns
µC
- 10.4
- 240
- 2.4
A
ns
µC
- 20.5
A
DocID028065 Rev 1
5/13

5 Page





STP45N60DM2AG arduino
STP45N60DM2AG
Dim.
A
b
b1
c
D
D1
E
e
e1
F
H1
J1
L
L1
L20
L30
øP
Q
Table 9: TO-220 type A mechanical data
mm
Min.
Typ.
4.40
0.61
1.14
0.48
15.25
10
2.40
4.95
1.23
6.20
2.40
13
3.50
3.75
2.65
1.27
16.40
28.90
Package information
Max.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
3.85
2.95
DocID028065 Rev 1
11/13

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