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PDF STP45N40DM2AG Data sheet ( Hoja de datos )
| Número de pieza | STP45N40DM2AG | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
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STP45N40DM2AG
Automotive N-channel 400 V, 0.058 Ω typ., 38 A MDmesh™
DM2 Power MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
STP45N40DM2AG
VDS
400 V
RDS(on)
max.
0.072 Ω
ID PTOT
38 A 250 W
Designed for automotive applications and
AEC-Q101 qualified
Fast-recovery body diode
Extremely low gate charge and input
capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Table 1: Device summary
Order code
Marking Package Packing
STP45N40DM2AG 45N40DM2 TO-220
Tube
September 2015
DocID028082 Rev 2
This is information on a product in full production.
1/13
www.st.com
1 page  
STP45N40DM2AG
Symbol Parameter
ISD
Source-drain
current
ISDM(1)
Source-drain
current
(pulsed)
VSD(2)
Forward on
voltage
trr
Reverse
recovery time
Reverse
Qrr recovery
charge
Reverse
IRRM recovery
current
trr
Reverse
recovery time
Reverse
Qrr recovery
charge
Reverse
IRRM recovery
current
Table 8: Source-drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
- 38 A
- 152 A
VGS = 0 V, ISD = 38 A
ISD = 39 A, di/dt = 100 A/µs, VDD = 60 V
(see Figure 16: "Test circuit for inductive
load switching and diode recovery times")
- 1.6 V
- 95
ns
- 0.4
µC
- 8.5
A
ISD = 39 A, di/dt = 100 A/µs, VDD = 60 V,
Tj = 150 °C (see Figure 16: "Test circuit for
inductive load switching and diode
recovery times")
- 185
- 1.62
- 17.5
ns
µC
A
Notes:
(1) Pulse width is limited by safe operating area.
(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
Symbol
V(BR)GSO
Table 9: Gate-source Zener diode
Parameter
Test conditions
Gate-source breakdown voltage IGS = ±250 µA, ID = 0 A
Min. Typ. Max. Unit
±30 -
-V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection, thus eliminating the need for additional external componentry.
DocID028082 Rev 2
5/13
5 Page 
STP45N40DM2AG
Dim.
A
b
b1
c
D
D1
E
e
e1
F
H1
J1
L
L1
L20
L30
øP
Q
Table 10: TO-220 type A mechanical data
mm
Min.
Typ.
4.40
0.61
1.14
0.48
15.25
10
2.40
4.95
1.23
6.20
2.40
13
3.50
3.75
2.65
1.27
16.40
28.90
Package information
Max.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
3.85
2.95
DocID028082 Rev 2
11/13
11 Page | ||
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