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Número de pieza | STP43N60DM2 | |
Descripción | N-channel Power MOSFET | |
Fabricantes | STMicroelectronics | |
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No Preview Available ! STP43N60DM2
N-channel 600 V, 0.085 Ω typ., 34 A MDmesh™ DM2
Power MOSFET in a TO-220 package
Datasheet - production data
Features
Order code
STP43N60DM2
VDS @
TJmax.
650 V
RDS(on)
max.
0.093 Ω
ID PTOT
34 A 250 W
Figure 1: Internal schematic diagram
• Fast-recovery body diode
• Extremely low gate charge and input
capacitance
• Low on-resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
Applications
• Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Order code
STP43N60DM2
Table 1: Device summary
Marking
43N60DM2
Package
TO-220
Packing
Tube
July 2015
DocID026790 Rev 5
This is information on a product in full production.
1/13
www.st.com
1 page STP43N60DM2
Symbol
ISD
ISDM(1)
VSD(2)
trr
Qrr
IRRM
trr
Qrr
IRRM
Parameter
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery
time
Reverse recovery
charge
Reverse recovery
current
Reverse recovery
time
Reverse recovery
charge
Reverse recovery
current
Table 8: Source-drain diode
Test conditions
VGS = 0 V, ISD = 34 A
ISD = 34 A, di/dt = 100 A/µs,
VDD = 60 V (see Figure 16:
"Test circuit for inductive load
switching and diode recovery
times")
ISD = 34 A, di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C (see
Figure 16: "Test circuit for
inductive load switching and
diode recovery times")
Notes:
(1) Pulse width is limited by safe operating area.
(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
Electrical characteristics
Min.
-
-
-
-
Typ.
120
Max. Unit
34 A
136 A
1.6 V
ns
- 0.6
µC
- 10.4
A
- 240
ns
- 2.4
µC
- 20.5
A
DocID026790 Rev 5
5/13
5 Page STP43N60DM2
Dim.
A
b
b1
c
D
D1
E
e
e1
F
H1
J1
L
L1
L20
L30
øP
Q
Table 9: TO-220 type A mechanical data
mm
Min.
Typ.
4.40
0.61
1.14
0.48
15.25
10
2.40
4.95
1.23
6.20
2.40
13
3.50
3.75
2.65
1.27
16.40
28.90
Package information
Max.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
3.85
2.95
DocID026790 Rev 5
11/13
11 Page |
Páginas | Total 13 Páginas | |
PDF Descargar | [ Datasheet STP43N60DM2.PDF ] |
Número de pieza | Descripción | Fabricantes |
STP43N60DM2 | N-channel Power MOSFET | STMicroelectronics |
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