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Número de pieza | STP18N60DM2 | |
Descripción | N-channel Power MOSFET | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
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No Preview Available ! STP18N60DM2
N-channel 600 V, 0.260 Ω typ., 12 A MDMesh™ DM2
Power MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
Features
Order code
STP18N60DM2
VDS
600 V
RDS(on) max.
0.295 Ω
ID
12 A
Fast-recovery body diode
Extremely low gate charge and input
capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
S(3)
Order code
STP18N60DM2
AM15572v1_tab
Table 1: Device summary
Marking
18N60DM2
Package
TO-220
Packing
Tube
January 2016
DocID027674 Rev 3
This is information on a product in full production.
1/13
www.st.com
1 page STP18N60DM2
Symbol
Parameter
Table 8: Source-drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
ISD Source-drain current
- 12 A
ISDM(1) Source-drain current (pulsed)
- 48 A
VSD (2) Forward on voltage
VGS = 0 V, ISD = 12 A
-
1.6 V
trr Reverse recovery time
Qrr Reverse recovery charge
IRRM Reverse recovery current
ISD = 12 A,
- 125
di/dt = 100 A/µs,
- 0.675
VDD = 60 V (see Figure 16:
"Test circuit for inductive
load switching and diode
- 11
recovery times")
ns
nC
A
trr Reverse recovery time
Qrr Reverse recovery charge
IRRM Reverse recovery current
ISD = 12 A,
di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C
(see Figure 16: "Test
circuit for inductive load
switching and diode
recovery times")
- 190
- 1225
- 13
ns
nC
A
Notes:
(1) Pulse width is limited by safe operating area.
(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
DocID027674 Rev 3
5/13
5 Page STP18N60DM2
Dim.
A
b
b1
c
D
D1
E
e
e1
F
H1
J1
L
L1
L20
L30
øP
Q
Table 9: TO-220 type A mechanical data
mm
Min.
Typ.
4.40
0.61
1.14
0.48
15.25
10
2.40
4.95
1.23
6.20
2.40
13
3.50
3.75
2.65
1.27
16.40
28.90
Package information
Max.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
3.85
2.95
DocID027674 Rev 3
11/13
11 Page |
Páginas | Total 13 Páginas | |
PDF Descargar | [ Datasheet STP18N60DM2.PDF ] |
Número de pieza | Descripción | Fabricantes |
STP18N60DM2 | N-channel Power MOSFET | STMicroelectronics |
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