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PDF STL8N6LF6AG Data sheet ( Hoja de datos )

Número de pieza STL8N6LF6AG
Descripción N-channel Power MOSFET
Fabricantes STMicroelectronics　
Logotipo STMicroelectronics Logotipo



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No Preview Available ! STL8N6LF6AG Hoja de datos, Descripción, Manual

STL8N6LF6AG
Automotive-grade N-channel 60 V, 21 mΩ typ., 32 A STripFET™
F6 Power MOSFET in a PowerFLAT™ 5x6 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
VDS RDS(on) max. ID PTOT
STL8N6LF6AG 60 V
27 mΩ
32 A 55 W
Designed for automotive applications and
AEC-Q101 qualified
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss
Wettable flank package
Applications
Switching applications
Description
This device is an N-channel Power MOSFET
developed using the STripFET™ F6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low RDS(on) in all
packages.
Order code
STL8N6LF6AG
Table 1: Device summary
Marking
Package
8N6LF6
PowerFLAT™ 5x6
Packing
Tape and reel
January 2016
DocID028068 Rev 2
This is information on a product in full production.
1/14
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STL8N6LF6AG pdf
STL8N6LF6AG
Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area
Figure 3: Thermal impedance
Figure 4: Output characteristics
Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance
DocID028068 Rev 2
5/14

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STL8N6LF6AG arduino
STL8N6LF6AG
4.2 PowerFLAT™ 5x6 WF packing information
Figure 21: PowerFLAT™ 5x6 WF tape
Package information
Figure 22: PowerFLAT™ 5x6 package orientation in carrier tape
DocID028068 Rev 2
11/14

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