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PDF STL16N65M2 Data sheet ( Hoja de datos )
| Número de pieza | STL16N65M2 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STL16N65M2
N-channel 650 V, 0.325 Ω typ., 7.5 A MDmesh M2
Power MOSFET in a PowerFLAT™ 5x6 HV package
Datasheet − production data
Features
1234
PowerFLAT™ 5x6 HV
Figure 1. Internal schematic diagram
D(5, 6, 7, 8)
8 76 5
G(4)
Order code VDS @ TJmax RDS(on) max ID
STL16N65M2
710 V
0.395 Ω 7.5 A
• Extremely low gate charge
• Excellent output capacitance (Coss) profile
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical
structure, the device exhibits low on-resistance
and optimized switching characteristics, rendering
it suitable for the most demanding high efficiency
converters.
S(1, 2, 3)
12 34
Top View
AM15540v2
Order codes
STL16N65M2
Table 1. Device summary
Marking
Package
16N65M2
PowerFLAT™ 5x6 HV
Packaging
Tape and reel
October 2014
This is information on a product in full production.
DocID027128 Rev 1
1/16
www.st.com
1 page  
STL16N65M2
Electrical characteristics
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 7. Switching times
Test conditions
VDD = 325 V, ID = 5.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 14 and 19)
Min. Typ. Max. Unit
- 11.3 - ns
- 8.2 - ns
- 36 - ns
- 11.3 - ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
VGS = 0, ISD = 11 A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 11 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 16)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 11 A, di/dt = 100 A/µs
VDD = 60 V, Tj=150 °C
(see Figure 16)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
- 7.5 A
- 30 A
- 1.6 V
- 342
ns
- 3.5
µC
- 20.4
A
- 458
ns
- 4.6
µC
- 20.5
A
DocID027128 Rev 1
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16
5 Page 
STL16N65M2
Dim.
A
A1
A2
b
D
E
D2
E2
e
L
K
Package mechanical data
Table 9. PowerFLAT™ 5x6 HV mechanical data
mm
Min.
0.80
0.02
0.30
5.00
5.95
4.30
3.10
0.50
1.90
Typ.
0.25
5.20
6.15
4.40
3.20
1.27
0.55
2.00
Max.
1.00
0.05
0.50
5.40
6.35
4.50
3.30
0.60
2.10
DocID027128 Rev 1
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| PDF Descargar | [ Datasheet STL16N65M2.PDF ] | |
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