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What is STL16N65M2?

This electronic component, produced by the manufacturer "STMicroelectronics", performs the same function as "N-channel Power MOSFET".


STL16N65M2 Datasheet PDF - STMicroelectronics

Part Number STL16N65M2
Description N-channel Power MOSFET
Manufacturers STMicroelectronics 
Logo STMicroelectronics Logo 


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STL16N65M2
N-channel 650 V, 0.325 typ., 7.5 A MDmesh M2
Power MOSFET in a PowerFLAT™ 5x6 HV package
Datasheet production data
Features
1234
PowerFLAT™ 5x6 HV
Figure 1. Internal schematic diagram
D(5, 6, 7, 8)
8 76 5
G(4)
Order code VDS @ TJmax RDS(on) max ID
STL16N65M2
710 V
0.395 7.5 A
Extremely low gate charge
Excellent output capacitance (Coss) profile
100% avalanche tested
Zener-protected
Applications
Switching applications
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical
structure, the device exhibits low on-resistance
and optimized switching characteristics, rendering
it suitable for the most demanding high efficiency
converters.
S(1, 2, 3)
12 34
Top View
AM15540v2
Order codes
STL16N65M2
Table 1. Device summary
Marking
Package
16N65M2
PowerFLAT™ 5x6 HV
Packaging
Tape and reel
October 2014
This is information on a product in full production.
DocID027128 Rev 1
1/16
www.st.com

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STL16N65M2 equivalent
STL16N65M2
Electrical characteristics
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 7. Switching times
Test conditions
VDD = 325 V, ID = 5.5 A,
RG = 4.7 , VGS = 10 V
(see Figure 14 and 19)
Min. Typ. Max. Unit
- 11.3 - ns
- 8.2 - ns
- 36 - ns
- 11.3 - ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
VGS = 0, ISD = 11 A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 11 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 16)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 11 A, di/dt = 100 A/µs
VDD = 60 V, Tj=150 °C
(see Figure 16)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
- 7.5 A
- 30 A
- 1.6 V
- 342
ns
- 3.5
µC
- 20.4
A
- 458
ns
- 4.6
µC
- 20.5
A
DocID027128 Rev 1
5/16
16


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Part Details

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Featured Datasheets

Part NumberDescriptionMFRS
STL16N65M2The function is N-channel Power MOSFET. STMicroelectronicsSTMicroelectronics

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