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What is STL15N60M2-EP?

This electronic component, produced by the manufacturer "STMicroelectronics", performs the same function as "N-channel Power MOSFET".


STL15N60M2-EP Datasheet PDF - STMicroelectronics

Part Number STL15N60M2-EP
Description N-channel Power MOSFET
Manufacturers STMicroelectronics 
Logo STMicroelectronics Logo 


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STL15N60M2-EP
N-channel 600 V, 0.389 Ω typ., 7 A MDmesh™ M2 EP
Power MOSFET in a PowerFLAT™ 5x6 HV package
Datasheet - production data
1
2
3
4
PowerFLAT™ 5x6 HV
Figure 1: Internal schematic diagram
D(5, 6, 7, 8)
8 76 5
G(4)
S(1, 2, 3)
12 34
Top View
AM15540v1
Features
Order code
STL15N60M2-EP
VDS @
TJmax
RDS(on)
max.
ID
PTOT
650 V 0.418 Ω 7 A 55 W
Extremely low gate charge
Excellent output capacitance (COSS) profile
Very low turn-off switching losses
100% avalanche tested
Zener-protected
Applications
Switching applications
Tailored for very high frequency converters
(f > 150 kHz)
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 EP enhanced
performance technology. Thanks to its strip
layout and an improved vertical structure, the
device exhibits low on-resistance and optimized
switching characteristics with very low turn-off
switching losses, rendering it suitable for the
most demanding very high frequency converters.
Order code
STL15N60M2-EP
Table 1: Device summary
Marking
Package
15N60M2EP
PowerFLAT™ 5x6 HV
Packing
Tape and reel
June 2015
DocID027974 Rev 1
This is information on a product in full production.
1/16
www.st.com

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STL15N60M2-EP equivalent
STL15N60M2-EP
Symbol
Parameter
Table 8: Source-drain diode
Test conditions
ISD
ISDM(1)
VSD(2)
trr
Qrr
IRRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGS = 0 V, ISD = 7 A
ISD = 11 A,
di/dt = 100 A/µs,
VDD = 60 V (see Figure 17:
"Test circuit for inductive
load switching and diode
recovery times")
trr Reverse recovery time
ISD = 11 A,
Qrr
Reverse recovery charge
di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C
(see Figure 17: "Test
IRRM
Reverse recovery current circuit for inductive load
switching and diode
recovery times")
Electrical characteristics
Min.
-
-
-
-
-
Typ.
Max. Unit
7A
28 A
1.6 V
280 ns
2.7 µC
- 19.5
A
- 400
- 3.8
ns
µC
- 19
A
Notes:
(1) Pulse width is limited by safe operating area.
(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
DocID027974 Rev 1
5/16


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On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for STL15N60M2-EP electronic component.


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Featured Datasheets

Part NumberDescriptionMFRS
STL15N60M2-EPThe function is N-channel Power MOSFET. STMicroelectronicsSTMicroelectronics

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