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PDF STL15N60M2-EP Data sheet ( Hoja de datos )
| Número de pieza | STL15N60M2-EP | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STL15N60M2-EP
N-channel 600 V, 0.389 Ω typ., 7 A MDmesh™ M2 EP
Power MOSFET in a PowerFLAT™ 5x6 HV package
Datasheet - production data
1
2
3
4
PowerFLAT™ 5x6 HV
Figure 1: Internal schematic diagram
D(5, 6, 7, 8)
8 76 5
G(4)
S(1, 2, 3)
12 34
Top View
AM15540v1
Features
Order code
STL15N60M2-EP
VDS @
TJmax
RDS(on)
max.
ID
PTOT
650 V 0.418 Ω 7 A 55 W
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• Very low turn-off switching losses
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
• Tailored for very high frequency converters
(f > 150 kHz)
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 EP enhanced
performance technology. Thanks to its strip
layout and an improved vertical structure, the
device exhibits low on-resistance and optimized
switching characteristics with very low turn-off
switching losses, rendering it suitable for the
most demanding very high frequency converters.
Order code
STL15N60M2-EP
Table 1: Device summary
Marking
Package
15N60M2EP
PowerFLAT™ 5x6 HV
Packing
Tape and reel
June 2015
DocID027974 Rev 1
This is information on a product in full production.
1/16
www.st.com
1 page  
STL15N60M2-EP
Symbol
Parameter
Table 8: Source-drain diode
Test conditions
ISD
ISDM(1)
VSD(2)
trr
Qrr
IRRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGS = 0 V, ISD = 7 A
ISD = 11 A,
di/dt = 100 A/µs,
VDD = 60 V (see Figure 17:
"Test circuit for inductive
load switching and diode
recovery times")
trr Reverse recovery time
ISD = 11 A,
Qrr
Reverse recovery charge
di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C
(see Figure 17: "Test
IRRM
Reverse recovery current circuit for inductive load
switching and diode
recovery times")
Electrical characteristics
Min.
-
-
-
-
-
Typ.
Max. Unit
7A
28 A
1.6 V
280 ns
2.7 µC
- 19.5
A
- 400
- 3.8
ns
µC
- 19
A
Notes:
(1) Pulse width is limited by safe operating area.
(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
DocID027974 Rev 1
5/16
5 Page 
STL15N60M2-EP
4.1 PowerFLAT™ 5x6 HV package information
Package information
Figure 21: PowerFLAT™ 5x6 HV package outline
b (x8)
e
BOTTOM VIEW
Resin protrusion
PIN #1 ID
D2
SEATING
PLANE
SIDE VIEW
D
Resin protrusion
DocID027974 Rev 1
TOP VIEW
8368143_Rev_B
11/16
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet STL15N60M2-EP.PDF ] | |
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