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PDF STL11N6F7 Data sheet ( Hoja de datos )
| Número de pieza | STL11N6F7 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STL11N6F7
N-channel 60 V, 10 mΩ typ., 11 A STripFET™ F7
Power MOSFET in a PowerFLAT™ 3.3x3.3 package
Datasheet - production data
1
2
3
4
PowerFLAT™ 3.3x3.3
Figure 1: Internal schematic diagram
D(5, 6, 7, 8)
8 76 5
G(4)
Features
Order code
STL11N6F7
VDS
60 V
RDS(on) max.
12 mΩ
ID
11 A
Features
Among the lowest RDS(on) on the market
Excellent figure of merit (FoM)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness
Applications
Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
S(1, 2, 3)
1234
AM15810v1
Order code
STL11N6F7
Marking
11N6F
Table 1: Device summary
Package
PowerFLAT™ 3.3x3.3
Packing
Tape and reel
November 2015
DocID028134 Rev 2
This is information on a product in full production.
1/13
www.st.com
1 page  
STL11N6F7
(1)Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Electrical characteristics
2.1 Electrical characteristics (curve)
Figure 2: Safe operating area
Figure 3: Thermal impedance
Figure 4: Output characteristics
Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance
DocID028134 Rev 2
5/13
5 Page 
STL11N6F7
Package information
Figure 20: PowerFLAT™ 3.3x3.3 recommended footprint
8465286_footprint
DocID028134 Rev 2
11/13
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet STL11N6F7.PDF ] | |
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