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Número de pieza | STH290N4F6-6AG | |
Descripción | N-channel Power MOSFET | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
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No Preview Available ! STH290N4F6-2AG,
STH290N4F6-6AG
Automotive-grade N-channel 40 V, 1.3 mΩ typ., 180 A STripFET™ F6
Power MOSFETs in H²PAK-2 and H²PAK-6 packages
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
VDS
STH290N4F6-2AG
40 V
STH290N4F6-6AG
RDS(on)
max.
1.7 mΩ
ID
180 A
PTOT
300 W
• Designed for automotive applications and
AEC-Q101 qualified
• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using the STripFET™ F6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low RDS(on) in all
packages.
Order code
STH290N4F6-2AG
STH290N4F6-6AG
Table 1: Device summary
Marking
Package
290N4F6
H²PAK-2
H²PAK-6
Packing
Tape and Reel
July 2015
DocID027971 Rev 1
This is information on a product in full production.
1/19
www.st.com
1 page STH290N4F6-2AG, STH290N4F6-6AG
Electrical characteristics
Table 7: Source-drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD(1) Source-drain current
- 180 A
ISDM
VSD(2)
Source-drain current
(pulsed)
Forward on voltage
VGS = 0 V, ISD = 90 A
- 720 A
- 1.3 V
trr Reverse recovery time
ISD = 180 A, di/dt = 100 A/µs,
Qrr
Reverse recovery charge VDD = 32 V (see Figure 15:
"Test circuit for inductive load
IRRM
Reverse recovery current switching and diode recovery
times")
- 36
- 42
- 2.3
ns
nC
A
Notes:
(1) Limited by package, current allowed by silicon is 295 A.
(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
DocID027971 Rev 1
5/19
5 Page STH290N4F6-2AG, STH290N4F6-6AG
Table 8: H²PAK-2 mechanical data
Dim.
Min.
mm
Typ.
A 4.30
A1 0.03
C 1.17
e 4.98
E 0.50
F 0.78
H 10.00
H1 7.40
L 15.30
-
L1 1.27
L2 4.93
L3 6.85
L4 1.5
M 2.6
R 0.20
V 0°
Package information
Max.
4.80
0.20
1.37
5.18
0.90
0.85
10.40
7.80
15.80
1.40
5.23
7.25
1.7
2.9
0.60
8°
DocID027971 Rev 1
11/19
11 Page |
Páginas | Total 19 Páginas | |
PDF Descargar | [ Datasheet STH290N4F6-6AG.PDF ] |
Número de pieza | Descripción | Fabricantes |
STH290N4F6-6AG | N-channel Power MOSFET | STMicroelectronics |
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