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What is STH290N4F6-2AG?

This electronic component, produced by the manufacturer "STMicroelectronics", performs the same function as "N-channel Power MOSFET".


STH290N4F6-2AG Datasheet PDF - STMicroelectronics

Part Number STH290N4F6-2AG
Description N-channel Power MOSFET
Manufacturers STMicroelectronics 
Logo STMicroelectronics Logo 


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STH290N4F6-2AG,
STH290N4F6-6AG
Automotive-grade N-channel 40 V, 1.3 mΩ typ., 180 A STripFET™ F6
Power MOSFETs in H²PAK-2 and H²PAK-6 packages
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
VDS
STH290N4F6-2AG
40 V
STH290N4F6-6AG
RDS(on)
max.
1.7 mΩ
ID
180 A
PTOT
300 W
Designed for automotive applications and
AEC-Q101 qualified
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss
Applications
Switching applications
Description
This device is an N-channel Power MOSFET
developed using the STripFET™ F6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low RDS(on) in all
packages.
Order code
STH290N4F6-2AG
STH290N4F6-6AG
Table 1: Device summary
Marking
Package
290N4F6
H²PAK-2
H²PAK-6
Packing
Tape and Reel
July 2015
DocID027971 Rev 1
This is information on a product in full production.
1/19
www.st.com

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STH290N4F6-2AG equivalent
STH290N4F6-2AG, STH290N4F6-6AG
Electrical characteristics
Table 7: Source-drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD(1) Source-drain current
- 180 A
ISDM
VSD(2)
Source-drain current
(pulsed)
Forward on voltage
VGS = 0 V, ISD = 90 A
- 720 A
- 1.3 V
trr Reverse recovery time
ISD = 180 A, di/dt = 100 A/µs,
Qrr
Reverse recovery charge VDD = 32 V (see Figure 15:
"Test circuit for inductive load
IRRM
Reverse recovery current switching and diode recovery
times")
- 36
- 42
- 2.3
ns
nC
A
Notes:
(1) Limited by package, current allowed by silicon is 295 A.
(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
DocID027971 Rev 1
5/19


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Featured Datasheets

Part NumberDescriptionMFRS
STH290N4F6-2AGThe function is N-channel Power MOSFET. STMicroelectronicsSTMicroelectronics

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