STGW60H65DRF Datasheet PDF - STMicroelectronics
Part Number | STGW60H65DRF | |
Description | field stop trench gate IGBT | |
Manufacturers | STMicroelectronics | |
Logo | ||
There is a preview and STGW60H65DRF download ( pdf file ) link at the bottom of this page. Total 13 Pages |
Preview 1 page No Preview Available ! STGW60H65DRF
60 A, 650 V field stop trench gate IGBT with Ultrafast diode
3
2
1
TO-247
Figure 1. Internal schematic diagram
Datasheet - production data
Applications
Photovoltaic inverters
Uninterruptible power supply
Welding
Power factor correction
High switching frequency converters
Description
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. This IGBT is the result of a compromise
between conduction and switching losses,
maximizing the efficiency of high switching
frequency converters. Furthermore, a slightly
positive VCE(sat) temperature coefficient and very
tight parameter distribution result in easier
paralleling operation.
Features
Very high speed switching
Tight parameters distribution
Safe paralleling
Low thermal resistance
6 µs short-circuit withstand time
Ultrafast soft recovery antiparallel diode
Order code
Table 1. Device summary
Marking
Package
STGW60H65DRF
GW60H65DRF
TO-247
April 2013
This is information on a product in full production.
DocID022346 Rev 6
Packaging
Tube
1/13
www.st.com
13
|
|
STGW60H65DRF
Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 2. Output characteristics (TJ = - 40 °C)
IC (A)
220
200
180
VGE = 15V
VGE = 20V
AM11847v1
13V
160 11V
140
120
100
80
60
40
9V
20
0
0 1 2 3 4 VCE (V)
Figure 3. Output characteristics (TJ = 25 °C)
IC (A)
220
200
180
VGE = 15V
VGE = 20V
AM11848v1
13V
160 11V
140
120
100
80
60
40
9V
20
0
0 1 2 3 4 VCE (V)
Figure 4. Output characteristics (TJ = 150 °C)
IC (A)
220
VGE = 15V
AM11849v1
200
VGE = 20V
13V
180
160
140 11V
120
100
80
60
40 9V
20
0
0 1 2 3 4 VCE (V)
Figure 5. Transfer characteristics
IC (A)
220
200
180
160
140
120
100
80
60
40
20
0
6
VCE = 10V
TJ = 150°C
TJ = 25°C
789
AM11850v1
TJ = -40°C
10 11
12 VGE (V)
Figure 6. VCE(SAT) vs. junction temperature
VCE (V)
AM11851v1
2.8
2.6
IC = 120A
2.4
2.2
2.0
IC = 60A
1.8
1.6
IC = 30A
1.4
1.2
-50
-25
0
25 50 75 100 125 TJ (ºC)
Figure 7. VCE(SAT) vs. collector current
VCE (V)
2.8
2.6
VGE = 15V
TJ = 150°C
AM11852v1
2.4 TJ = 25°C
2.2
2.0 TJ = -40°C
1.8
1.6
1.4
1.2
30 40 50 60 70 80 90 100 110 IC (A)
DocID022346 Rev 6
5/13
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for STGW60H65DRF electronic component. |
Information | Total 13 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ STGW60H65DRF.PDF Datasheet ] |
Share Link :
Electronic Components Distributor
An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists. |
SparkFun Electronics | Allied Electronics | DigiKey Electronics | Arrow Electronics |
Mouser Electronics | Adafruit | Newark | Chip One Stop |
Featured Datasheets
Part Number | Description | MFRS |
STGW60H65DRF | The function is field stop trench gate IGBT. STMicroelectronics | |
Semiconductors commonly used in industry:
1N4148 |  
BAW56 |
1N5400 |
NE555 | | ||
Quick jump to:
STGW
1N4
2N2
2SA
2SC
74H
BC
HCF
IRF
KA |