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Datasheet STGW60H65DRF Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1STGW60H65DRFfield stop trench gate IGBT

STGW60H65DRF 60 A, 650 V field stop trench gate IGBT with Ultrafast diode 3 2 1 TO-247 Figure 1. Internal schematic diagram Datasheet - production data Applications  Photovoltaic inverters  Uninterruptible power supply  Welding  Power factor correction  High switching frequency con
STMicroelectronics
STMicroelectronics		igbt


STG Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1STG2017Dual N-Channel E nhancement Mode Field Effect Transistor

S T G 2017 S amHop Microelectronics C orp. May,18 2005 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( mW ) Max ID 7A R DS (ON) S uper high dense cell design for low R DS (ON ). 20 @ V G S = 4.5V 28 @ V G S = 2.5V
SamHop Microelectronics
SamHop Microelectronics		transistor
2STG2454Dual N-Channel Enhancement Mode Field Effect Transistor

Gr Pr STG2454 Ver 1.1 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 24V ID 7A R DS(ON) (m Ω) Max 17 @ VGS=4.0V 29 @ VGS=2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD
SamHop Microelectronics
SamHop Microelectronics		transistor
3STG2507Dual P-Channel E nhancement Mode Field Effect Transistor

S T G 2507 S amHop Microelectronics C orp. May,10 2005 Dual P -C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S -20V F E AT UR E S ( mW ) Max ID 6.2A R DS (ON) S uper high dense cell design for low R DS (ON ). 17 @ V G S = -4.5V 25 @ V G S =
SamHop Microelectronics
SamHop Microelectronics		transistor
4STG3155Low voltage 0.5 Ohm Max single SPDT switch

STG3155 Low voltage 0.5Ω Max single SPDT switch with break-before-make feature Features ■ High speed: – tPD = 1.5ns (Typ.) at VCC = 3.0V – tPD = 1.5ns (Typ.) at VCC = 2.3V Ultra low power dissipation: – ICC = 0.2µA (Max.) at TA = 85°C Low "ON" resistance: – RON = 0.5Ω (TA = 25ºC) a
ST Microelectronics
ST Microelectronics		data
5STG3157Low voltage low on-resistance SPDT switch

STG3157 Low voltage low on-resistance SPDT switch with break-before-make feature Features ■ High speed: – tPD = 0.3 ns (max) at VCC = 4.5 V – tPD = 0.8 ns (max) at VCC = 3.0 V – tPD = 1.2 ns (max) at VCC = 2.3 V ■ Ultra low power dissipation: – ICC = 1 µA (max) at TA = 85 °C ■ Low o
ST Microelectronics
ST Microelectronics		data
6STG3159single SPDT switch

STG3159 Low voltage 1Ω max single SPDT switch with break-before-make feature Features ■ High speed: – tPD = 1.5ns (Typ.) at VCC = 3.0V – tPD = 1.5ns (Typ.) at VCC = 2.3V Ultra low power dissipation: – ICC = 0.2µA (Max.) at TA = 85°C Low "ON" resistance: – RON = 1.
STMicroelectronics
STMicroelectronics		data
7STG3220Low voltage high bandwidth dual SPDT switch

STG3220 Low voltage high bandwidth dual SPDT switch Features ■ ■ Ultra low power dissipation: – ICC = 1 μA (max.) at TA = 85 °C Low "ON" resistance: – RON = 4.8 Ω (TA = 25 ºC) at VCC = 4.3 V – RON = 5.9 Ω (TA = 25 ºC) at VCC = 3.0 V Wide operating voltage range:
ST Microelectronics
ST Microelectronics		data



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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