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PDF STFI7LN80K5 Data sheet ( Hoja de datos )
| Número de pieza | STFI7LN80K5 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STFI7LN80K5
N-channel 800 V, 0.95 Ω typ., 5 A MDmesh™ K5
Power MOSFET in a I²PAKFP package
Datasheet - production data
1 23
I 2 PAKFP
(TO-281)
Figure 1: Internal schematic diagram
D(2)
G(1)
Features
Order code
STFI7LN80K5
VDS
800 V
RDS(on) max.
1.15 Ω
ID
5A
Industry’s lowest RDS(on) x area
Industry’s best figure of merit (FoM)
Ultra-low gate charge
100% avalanche tested
Zener-protected
Applications
Switching applications
Description
This very high voltage N-channel Power
MOSFET is designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
S(3)
Order code
STFI7LN80K5
AM15572v1_no_tab
Table 1: Device summary
Marking
Package
7LN80K5
I²PAKFP (TO-281)
Packing
Tube
December 2015
DocID028783 Rev 1
This is information on a product in full production.
1/12
www.st.com
1 page  
STFI7LN80K5
Symbol Parameter
Table 8: Source-drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
ISD = 5 A, VGS = 0 V
- 5A
- 20 A
- 1.6 V
trr Reverse recovery time ISD = 5 A, di/dt = 100 A/µs,
Qrr
Reverse recovery
charge
VDD = 60 V
See Figure 16: "Test circuit for
IRRM
Reverse recovery
current
inductive load switching and diode
recovery times"
- 276
- 2.13
- 15.4
ns
µC
A
trr Reverse recovery time ISD = 5 A, di/dt = 100 A/µs
Qrr
Reverse recovery
charge
VDD = 60 V, Tj = 150 °C
See Figure 16: "Test circuit for
IRRM
Reverse recovery
current
inductive load switching and diode
recovery times"
- 402
- 2.79
- 13.9
ns
µC
A
Notes:
(1)Pulse width limited by safe operating area
(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
V(BR)GSO
Table 9: Gate-source Zener diode
Parameter
Test conditions
Gate-source breakdown voltage IGS= ± 1mA, ID= 0 A
Min. Typ. Max. Unit
30 -
-V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection,thus eliminating the need for additional external componentry.
DocID028783 Rev 1
5/12
5 Page 
STFI7LN80K5
Revision history
5 Revision history
Date
15-Dec-2015
Table 11: Document revision history
Revision
Changes
1 First release.
DocID028783 Rev 1
11/12
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet STFI7LN80K5.PDF ] | |
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