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Número de pieza | STF43N60DM2 | |
Descripción | N-channel Power MOSFET | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
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No Preview Available ! STF43N60DM2
N-channel 600 V, 0.085 Ω typ., 34 A MDmesh™ DM2
Power MOSFET in a TO-220FP package
Datasheet - production data
3
12
TO-220FP
Figure 1: Internal schematic diagram
Features
Order code
STF43N60DM2
VDS @
Tjmax.
650 V
RDS(on)
max.
0.093 Ω
ID
34 A
PTOT
40 W
• Fast-recovery body diode
• Extremely low gate charge and input
capacitance
• Low on-resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
Applications
• Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Order code
STF43N60DM2
Table 1: Device summary
Marking
43N60DM2
Package
TO-220FP
Packing
Tube
July 2015
DocID026789 Rev 2
This is information on a product in full production.
1/13
www.st.com
1 page STF43N60DM2
Electrical characteristics
Symbol
ISD(1)
ISDM(2)
VSD(3)
trr
Qrr
IRRM
trr
Qrr
Parameter
Table 8: Source-drain diode
Test conditions
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGS = 0 V, ISD = 34 A
ISD = 34 A,
di/dt = 100 A/µs,
VDD = 60 V (see Figure 16:
"Test circuit for inductive
load switching and diode
recovery times")
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 34 A,
di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C
(see Figure 16: "Test circuit
for inductive load switching
and diode recovery times")
Min.
-
-
-
-
-
-
-
-
-
Typ.
120
0.6
10.4
240
2.4
20.5
Max. Unit
34 A
136 A
1.6 V
ns
µC
A
ns
µC
A
Notes:
(1) Limited by maximum junction temperature.
(2) Pulse width is limited by safe operating area.
(3) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
DocID026789 Rev 2
5/13
5 Page STF43N60DM2
Dim.
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Dia
Package information
Table 9: TO-220FP package mechanical data
mm
Min.
Typ.
Max.
4.4 4.6
2.5 2.7
2.5 2.75
0.45 0.7
0.75 1
1.15 1.70
1.15 1.70
4.95 5.2
2.4 2.7
10 10.4
16
28.6 30.6
9.8 10.6
2.9 3.6
15.9 16.4
9 9.3
3 3.2
DocID026789 Rev 2
11/13
11 Page |
Páginas | Total 13 Páginas | |
PDF Descargar | [ Datasheet STF43N60DM2.PDF ] |
Número de pieza | Descripción | Fabricantes |
STF43N60DM2 | N-channel Power MOSFET | STMicroelectronics |
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