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Número de pieza | STF40N65M2 | |
Descripción | N-channel Power MOSFET | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de STF40N65M2 (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
No Preview Available ! STF40N65M2
N-channel 650 V, 0.087 Ω typ., 32 A MDmesh™ M2
Power MOSFET in a TO-220FP package
Datasheet - production data
3
12
TO-220FP
Figure 1: Internal schematic diagram
D(2)
G(1)
Features
Order code
STF40N65M2
VDS
650 V
RDS(on) max.
0.099 Ω
ID
32 A
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical
structure, the device exhibits low on-resistance
and optimized switching characteristics,
rendering it suitable for the most demanding high
efficiency converters.
S(3)
Order code
STF40N65M2
AM15572v1_no_tab
Table 1: Device summary
Marking
Package
40N65M2
TO-220FP
Packaging
Tube
February 2015
DocID027442 Rev 1
This is information on a product in full production.
1/13
www.st.com
1 page STF40N65M2
Symbol
Parameter
td(on)
tr
td(off)
Turn-on delay time
Rise time
Turn-off-delay time
tf Fall time
Table 7: Switching times
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
VDD = 325 V, ID = 16 A
RG = 4.7 Ω, VGS = 10 V (see
Figure 14: "Switching times
test circuit for resistive load"
and Figure 19: "Switching time
waveform")
- 15 -
- 10 -
- 96.5 -
- 12 -
ns
ns
ns
ns
Symbol
Parameter
Table 8: Source drain diode
Test conditions
ISD
ISDM(1)
VSD (2)
trr
Qrr
IRRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGS = 0 V, ISD = 32 A
ISD = 32 A, di/dt = 100 A/µs,
VDD = 60 V (see Figure 16: "
Test circuit for inductive load
switching and diode recovery
times")
trr Reverse recovery time
ISD = 32 A, di/dt = 100 A/µs,
Qrr
Reverse recovery charge
VDD = 60 V, Tj = 150 °C (see
Figure 16: " Test circuit for
inductive load switching and
IRRM Reverse recovery current diode recovery times")
Notes:
(1)Pulse width is limited by safe operating area
(2)Pulse test: pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
- 32 A
- 128 A
- 1.6 V
- 468
ns
- 8.7
µC
- 37.5
A
- 610
- 11.7
ns
µC
- 39
A
DocID027442 Rev 1
5/13
5 Page STF40N65M2
Dim.
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Dia
Table 9: TO-220FP mechanical data
mm
Min.
Typ.
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
16
28.6
9.8
2.9
15.9
9
3
Package information
Max.
4.6
2.7
2.75
0.7
1
1.70
1.70
5.2
2.7
10.4
30.6
10.6
3.6
16.4
9.3
3.2
DocID027442 Rev 1
11/13
11 Page |
Páginas | Total 13 Páginas | |
PDF Descargar | [ Datasheet STF40N65M2.PDF ] |
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