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Número de pieza | STF27N60M2-EP | |
Descripción | N-channel Power MOSFET | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
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No Preview Available ! STF27N60M2-EP
N-channel 600 V, 0.150 Ω typ., 20 A MDmesh™ M2 EP
Power MOSFET in TO-220FP package
Datasheet - production data
Features
Order code
STF27N60M2-EP
V DS
600 V
RDS(on) max
0.163 Ω
ID
20 A
TO-220FP
Figure 1: Internal schematic diagram
D(2)
G(1)
S(3)
AM15572v1_no_tab
Extremely low gate charge
Excellent output capacitance (COSS) profile
Very low turn-off switching losses
100% avalanche tested
Zener-protected
Applications
Switching applications
Tailored for very high frequency converters
(f > 150 kHz)
Description
These devices are N-channel Power MOSFETs
developed using MDmesh™ M2 EP enhanced
performance technology. Thanks to their strip
layout and an improved vertical structure, these
devices exhibit low on-resistance, optimized
switching characteristics with very low turn-off
switching losses, rendering them suitable for the
most demanding very high frequency converters.
Order code
STF27N60M2-EP
Table 1: Device summary
Marking
27N60M2EP
Package
TO-220FP
Packing
Tube
January 2016
DocID028863 Rev 1
This is information on a product in full production.
1/13
www.st.com
1 page STF27N60M2-EP
Symbol Parameter
ISD
Source-drain
current
ISDM(1)
Source-drain
current (pulsed)
VSD (2)
Forward on
voltage
trr
Reverse
recovery time
Qrr
Reverse
recovery charge
IRRM
Reverse
recovery current
trr
Reverse
recovery time
Qrr
Reverse
recovery charge
IRRM
Reverse
recovery current
Table 8: Source-drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
- 20 A
- 80 A
VGS = 0 V, ISD = 20 A
ISD = 20 A, di/dt = 100 A/µs, VDD = 60 V
(see Figure 19: "Switching time
waveform")
- 1.6 V
- 271
ns
- 3.44
µC
- 25.4
A
ISD = 20 A, di/dt = 100 A/µs, VDD = 60 V,
Tj = 150 °C (see Figure 19: "Switching
time waveform")
- 352
- 4.82
- 27.4
ns
µC
A
Notes:
(1)Pulse width is limited by safe operating area
(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID028863 Rev 1
5/13
5 Page STF27N60M2-EP
Dim.
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Dia
Package information
Table 9: TO-220FP package mechanical data
mm
Min.
Typ.
Max.
4.4 4.6
2.5 2.7
2.5 2.75
0.45 0.7
0.75 1
1.15 1.70
1.15 1.70
4.95 5.2
2.4 2.7
10 10.4
16
28.6 30.6
9.8 10.6
2.9 3.6
15.9 16.4
9 9.3
3 3.2
DocID028863 Rev 1
11/13
11 Page |
Páginas | Total 13 Páginas | |
PDF Descargar | [ Datasheet STF27N60M2-EP.PDF ] |
Número de pieza | Descripción | Fabricantes |
STF27N60M2-EP | N-channel Power MOSFET | STMicroelectronics |
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