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Número de pieza | STFI26N60M2 | |
Descripción | N-channel Power MOSFET | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
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No Preview Available ! STF26N60M2, STFI26N60M2
N-channel 600 V, 0.14 Ω typ., 20 A MDmesh™ M2
Power MOSFETs in TO-220FP and I²PAKFP packages
Datasheet - production data
123
TO-220FP
123
I2PAKFP (TO-281)
Figure 1: Internal schematic diagram
D(2)
G(1)
S(3)
AM15572v1_no_tab
Features
Order code
STF26N60M2
STFI26N60M2
VDS @
TJmax
650 V
RDS(on)
max.
0.165 Ω
ID
20 A
PTOT
30
W
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
• LCC converters, resonant converters
Description
These devices are N-channel Power MOSFETs
developed using MDmesh™ M2 technology.
Thanks to their strip layout and improved vertical
structure, these devices exhibit low on-resistance
and optimized switching characteristics,
rendering them suitable for the most demanding
high efficiency converters.
Order code
STF26N60M2
STFI26N60M2
Table 1: Device summary
Marking
Package
26N60M2
TO-220FP
I²PAKFP
Packing
Tube
July 2015
DocID027600 Rev 2
This is information on a product in full production.
1/15
www.st.com
1 page STF26N60M2, STFI26N60M2
Symbol
Parameter
Table 8: Source-drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
ISD
ISDM(1)
VSD(2)
trr
Qrr
IRRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGS = 0 V, ISD = 20 A
ISD = 20 A, di/dt = 100 A/µs,
VDD = 60 V (see Figure 16:
"Test circuit for inductive load
switching and diode recovery
times")
- 20 A
- 80 A
- 1.6 V
- 360
ns
-5
µC
- 27
A
trr
Reverse recovery time
ISD = 20 A, di/dt = 100 A/µs,
Qrr
Reverse recovery charge VDD = 60 V, Tj = 150 °C (see
Figure 16: "Test circuit for
IRRM
Reverse recovery current inductive load switching and
diode recovery times")
- 556
-8
- 29
ns
µC
A
Notes:
(1) Pulse width is limited by safe operating area.
(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
DocID027600 Rev 2
5/15
5 Page STF26N60M2, STFI26N60M2
Dim.
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Dia
Package information
Table 9: TO-220FP package mechanical data
mm
Min.
Typ.
Max.
4.4 4.6
2.5 2.7
2.5 2.75
0.45 0.7
0.75 1
1.15 1.70
1.15 1.70
4.95 5.2
2.4 2.7
10 10.4
16
28.6 30.6
9.8 10.6
2.9 3.6
15.9 16.4
9 9.3
3 3.2
DocID027600 Rev 2
11/15
11 Page |
Páginas | Total 15 Páginas | |
PDF Descargar | [ Datasheet STFI26N60M2.PDF ] |
Número de pieza | Descripción | Fabricantes |
STFI26N60M2 | N-channel Power MOSFET | STMicroelectronics |
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