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PDF STF25N60M2-EP Data sheet ( Hoja de datos )
| Número de pieza | STF25N60M2-EP | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STF25N60M2-EP
N-channel 600 V, 0.175 Ω typ., 18 A MDmesh™ M2 EP
Power MOSFET in a TO-220FP package
Datasheet - production data
3
12
TO-220FP
Figure 1: Internal schematic diagram
Features
Order code
STF25N60M2-EP
VDS @
TJmax
650 V
RDS(on)
max.
0.188 Ω
ID
18 A
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• Very low turn-off switching losses
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
• Tailored for Very High Frequency
Converters (f > 150 kHz)
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 EP enhanced
performance technology. Thanks to its strip
layout and an improved vertical structure, the
device exhibits low on-resistance, optimized
switching characteristics with very low turn-off
switching losses, rendering it suitable for the
most demanding very high frequency converters.
Order code
STF25N60M2-EP
Table 1: Device summary
Marking
Package
25N60M2EP
TO-220FP
Packaging
Tube
January 2015
DocID027251 Rev 2
This is information on a product in full production.
1/14
www.st.com
1 page  
STF25N60M2-EP
Symbol
Parameter
td(on)
tr
td(off)
Turn-on delay time
Rise time
Turn-off-delay time
tf Fall time
Table 8: Switching times
Test conditions
VDD = 300 V, ID = 9 A
RG = 4.7 Ω, VGS = 10 V
(see Figure 15: "Switching
times test circuit for
resistive load" and Figure
20: "Switching time
waveform")
Electrical characteristics
Min.
-
-
-
Typ.
15
10
61
Max.
-
-
-
Unit
ns
ns
ns
- 16 - ns
Symbol
Parameter
Table 9: Source drain diode
Test conditions
ISD
ISDM(1)
VSD (2)
trr
Qrr
IRRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGS = 0 V, ISD = 18 A
ISD = 18 A,
di/dt = 100 A/µs,
VDD = 100 V (see Figure
17: " Test circuit for
inductive load switching
and diode recovery times")
trr Reverse recovery time
ISD = 18 A,
Qrr
Reverse recovery charge
di/dt = 100 A/µs,
VDD = 100 V, Tj = 150 °C
(see Figure 17: " Test
IRRM
Reverse recovery current
circuit for inductive load
switching and diode
recovery times")
Min.
-
-
-
-
-
-
-
-
-
Typ.
360
5
28
445
6.5
29
Max. Unit
18 A
72 A
1.6 V
ns
µC
A
ns
µC
A
Notes:
(1)Pulse width is limited by safe operating area
(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID027251 Rev 2
5/14
5 Page 
STF25N60M2-EP
4.1 TO-220FP package information
Package mechanical data
Figure 21: TO-220FP package outline
DocID027251 Rev 2
7012510_ Rev_K_B
11/14
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| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet STF25N60M2-EP.PDF ] | |
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