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PDF STF10LN80K5 Data sheet ( Hoja de datos )
| Número de pieza | STF10LN80K5 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STF10LN80K5
N-channel 800 V, 0.55 Ω typ., 8 A MDmesh™ K5
Power MOSFET in a TO-220FP package
Datasheet - production data
TO-220FP
Figure 1: Internal schematic diagram
D(2)
G(1)
Features
Order code
STF10LN80K5
VDS
800 V
RDS(on) max.
0.63 Ω
ID
8A
Industry’s lowest RDS(on) x area
Industry’s best figure of merit (FoM)
Ultra-low gate charge
100% avalanche tested
Zener-protected
Applications
Switching applications
Description
This very high voltage N-channel Power
MOSFET is designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
S(3)
Order code
STF10LN80K5
AM15572v1_no_tab
Table 1: Device summary
Marking
Package
10LN80K5
TO-220FP
Packing
Tube
December 2015
DocID027751 Rev 3
This is information on a product in full production.
1/14
www.st.com
1 page  
STF10LN80K5
Symbol
Parameter
Table 8: Source-drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
ISD
ISDM(1)
VSD(2)
trr
Qrr
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
IRRM Reverse recovery current
trr Reverse recovery time
Qrr Reverse recovery charge
IRRM Reverse recovery current
- 8A
- 32 A
ISD = 8 A, VGS = 0 V
- 1.5 V
ISD = 8 A, di/dt = 100 A/µs, - 350
ns
VDD = 60 V, see Figure 17:
- 3.9
"Test circuit for inductive load
switching and diode recovery
times")
- 22.5
ISD = 8 A, di/dt = 100 A/µs, - 505
µC
A
ns
VDD = 60 V, Tj = 150 °C
see Figure 17: "Test circuit
for inductive load switching
and diode recovery times"
-5
- 20
µC
A
Notes:
(1)Pulse width limited by safe operating area
(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
V (BR)GSO
Table 9: Gate-source Zener diode
Parameter
Test conditions
Gate-source breakdown voltage IGS= ± 1mA, ID= 0A
Min Typ. Max Unit
30 -
-V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection,thus eliminating the need for additional external componentry.
DocID027751 Rev 3
5/14
5 Page 
STF10LN80K5
4.1 TO-220FP package information
Figure 21: TO-220FP package outline
Package information
DocID027751 Rev 3
11/14
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet STF10LN80K5.PDF ] | |
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