STD9HN65M2 Datasheet PDF - STMicroelectronics
| Part Number | STD9HN65M2 | |
| Description | N-channel Power MOSFET | |
| Manufacturers | STMicroelectronics | |
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STD9HN65M2
N-channel 600 V, 0.71 Ω typ., 5.5 A MDmesh™ M2
Power MOSFET in a DPAK package
Datasheet - production data
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
Features
Order code
STD9HN65M2
VDS
600 V
RDS(on) max.
0.82 Ω
ID
5.5 A
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical
structure, the device exhibits low on-resistance
and optimized switching characteristics,
rendering it suitable for the most demanding high
efficiency converters.
Order code
STD9HN65M2
S(3)
AM15572v1_tab
Table 1: Device summary
Marking
Package
9HN65M2
DPAK
Packing
Tape and reel
April 2015
DocID027601 Rev 2
This is information on a product in full production.
1/16
www.st.com
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STD9HN65M2
Symbol
Parameter
Table 8: Source drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
ISD
ISDM(1)
VSD(2)
trr
Qrr
IRRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGS = 0 V, ISD = 5 A
ISD = 5 A, di/dt = 100 A/µs,
VDD = 60 V (see Figure 16: "
Test circuit for inductive load
switching and diode recovery
times")
- 5.5 A
- 22 A
- 1.6 V
- 268
ns
- 1.7
µC
- 12.5
A
trr Reverse recovery time
ISD = 5 A, di/dt = 100 A/µs,
Qrr
Reverse recovery charge
VDD = 60 V, Tj = 150 °C (see
Figure 16: " Test circuit for
IRRM
Reverse recovery current
inductive load switching and
diode recovery times")
- 408
- 2.6
- 13
ns
µC
A
Notes:
(1) Pulse width is limited by safe operating area.
(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
DocID027601 Rev 2
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