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PDF STD9HN65M2 Data sheet ( Hoja de datos )

Número de pieza STD9HN65M2
Descripción N-channel Power MOSFET
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



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No Preview Available ! STD9HN65M2 Hoja de datos, Descripción, Manual

STD9HN65M2
N-channel 600 V, 0.71 Ω typ., 5.5 A MDmesh™ M2
Power MOSFET in a DPAK package
Datasheet - production data
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
Features
Order code
STD9HN65M2
VDS
600 V
RDS(on) max.
0.82 Ω
ID
5.5 A
Extremely low gate charge
Excellent output capacitance (COSS) profile
100% avalanche tested
Zener-protected
Applications
Switching applications
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical
structure, the device exhibits low on-resistance
and optimized switching characteristics,
rendering it suitable for the most demanding high
efficiency converters.
Order code
STD9HN65M2
S(3)
AM15572v1_tab
Table 1: Device summary
Marking
Package
9HN65M2
DPAK
Packing
Tape and reel
April 2015
DocID027601 Rev 2
This is information on a product in full production.
1/16
www.st.com

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STD9HN65M2 pdf
STD9HN65M2
Symbol
Parameter
Table 8: Source drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
ISD
ISDM(1)
VSD(2)
trr
Qrr
IRRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGS = 0 V, ISD = 5 A
ISD = 5 A, di/dt = 100 A/µs,
VDD = 60 V (see Figure 16: "
Test circuit for inductive load
switching and diode recovery
times")
- 5.5 A
- 22 A
- 1.6 V
- 268
ns
- 1.7
µC
- 12.5
A
trr Reverse recovery time
ISD = 5 A, di/dt = 100 A/µs,
Qrr
Reverse recovery charge
VDD = 60 V, Tj = 150 °C (see
Figure 16: " Test circuit for
IRRM
Reverse recovery current
inductive load switching and
diode recovery times")
- 408
- 2.6
- 13
ns
µC
A
Notes:
(1) Pulse width is limited by safe operating area.
(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
DocID027601 Rev 2
5/16

5 Page





STD9HN65M2 arduino
STD9HN65M2
Dim.
A
A1
A2
b
b4
c
c2
D
D1
E
E1
e
e1
H
L
L1
L2
L4
R
V2
Package information
Table 9: DPAK (TO-252) type A mechanical data
mm
Min.
Typ.
Max.
2.20 2.40
0.90 1.10
0.03 0.23
0.64 0.90
5.20 5.40
0.45 0.60
0.48
6.00
5.10
0.60
6.20
6.40
4.70
6.60
2.28
4.40
4.60
9.35 10.10
1.00 1.50
2.80
0.80
0.60
1.00
0.20
DocID027601 Rev 2
11/16

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