|
|
Número de pieza | STD9HN65M2 | |
Descripción | N-channel Power MOSFET | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de STD9HN65M2 (archivo pdf) en la parte inferior de esta página. Total 16 Páginas | ||
No Preview Available ! STD9HN65M2
N-channel 600 V, 0.71 Ω typ., 5.5 A MDmesh™ M2
Power MOSFET in a DPAK package
Datasheet - production data
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
Features
Order code
STD9HN65M2
VDS
600 V
RDS(on) max.
0.82 Ω
ID
5.5 A
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical
structure, the device exhibits low on-resistance
and optimized switching characteristics,
rendering it suitable for the most demanding high
efficiency converters.
Order code
STD9HN65M2
S(3)
AM15572v1_tab
Table 1: Device summary
Marking
Package
9HN65M2
DPAK
Packing
Tape and reel
April 2015
DocID027601 Rev 2
This is information on a product in full production.
1/16
www.st.com
1 page STD9HN65M2
Symbol
Parameter
Table 8: Source drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
ISD
ISDM(1)
VSD(2)
trr
Qrr
IRRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGS = 0 V, ISD = 5 A
ISD = 5 A, di/dt = 100 A/µs,
VDD = 60 V (see Figure 16: "
Test circuit for inductive load
switching and diode recovery
times")
- 5.5 A
- 22 A
- 1.6 V
- 268
ns
- 1.7
µC
- 12.5
A
trr Reverse recovery time
ISD = 5 A, di/dt = 100 A/µs,
Qrr
Reverse recovery charge
VDD = 60 V, Tj = 150 °C (see
Figure 16: " Test circuit for
IRRM
Reverse recovery current
inductive load switching and
diode recovery times")
- 408
- 2.6
- 13
ns
µC
A
Notes:
(1) Pulse width is limited by safe operating area.
(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
DocID027601 Rev 2
5/16
5 Page STD9HN65M2
Dim.
A
A1
A2
b
b4
c
c2
D
D1
E
E1
e
e1
H
L
L1
L2
L4
R
V2
Package information
Table 9: DPAK (TO-252) type A mechanical data
mm
Min.
Typ.
Max.
2.20 2.40
0.90 1.10
0.03 0.23
0.64 0.90
5.20 5.40
0.45 0.60
0.48
6.00
5.10
0.60
6.20
6.40
4.70
6.60
2.28
4.40
4.60
9.35 10.10
1.00 1.50
2.80
0.80
0.60
1.00
0.20
0°
8°
DocID027601 Rev 2
11/16
11 Page |
Páginas | Total 16 Páginas | |
PDF Descargar | [ Datasheet STD9HN65M2.PDF ] |
Número de pieza | Descripción | Fabricantes |
STD9HN65M2 | N-channel Power MOSFET | STMicroelectronics |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |