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PDF STD28P3LLH6AG Data sheet ( Hoja de datos )
| Número de pieza | STD28P3LLH6AG | |
| Descripción | P-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STD28P3LLH6AG
Automotive-grade P-channel -30 V, 0.027 Ω typ., -12 A
STripFET™ H6 Power MOSFET in a DPAK package
Datasheet - production data
Features
Order code
VDS
STD28P3LLH6AG -30V
RDS(on)
max.
0.030Ω
ID PTOT
-12A 33W
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
S(3)
AM11258v1
Designed for automotive applications and
AEC-Q101 qualified
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss
Logic level
Applications
Switching applications
Description
This device is a P-channel Power MOSFET
developed using the STripFET™ H6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low RDS(on) in all
packages.
Order code
STD28P3LLH6AG
Table 1: Device summary
Marking
Package
28P3LLH6
DPAK
Packing
Tape and reel
September 2015
DocID028397 Rev 1
This is information on a product in full production.
1/15
www.st.com
1 page  
STD28P3LLH6AG
Symbol Parameter
ISD
Source-drain
current
ISDM(1)
Source-drain
current
(pulsed)
VSD(2)
Forward on
voltage
trr
Reverse
recovery time
Reverse
Qrr recovery
charge
Reverse
IRRM recovery
current
Table 7: Source-drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
- -12 A
- -48 A
VGS = 0 V, ISD = -12 A
ISD = -12 A, di/dt = 100 A/µs, VDD = -24 V
(see Figure 15: "Test circuit for inductive
load switching and diode recovery times")
- -1.3 V
- 17.8
ns
- 10.2
nC
- -1.2
A
Notes:
(1) Pulse width is limited by safe operating area.
(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
DocID028397 Rev 1
5/15
5 Page 
STD28P3LLH6AG
Package information
Figure 17: DPAK (TO-252) recommended footprint (dimensions are in mm)
DocID028397 Rev 1
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