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PDF STD19N3LLH6AG Data sheet ( Hoja de datos )
| Número de pieza | STD19N3LLH6AG | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STD19N3LLH6AG
Automotive-grade N-channel 30 V, 25 mΩ typ., 10 A
STripFET™ H6 Power MOSFET in a DPAK package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
VDS
STD19N3LLH6AG 30 V
RDS(on)
max.
33 mΩ
ID PTOT
10 A 30 W
Designed for automotive applications and
AEC-Q101 qualified
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss
Logic level
Applications
Switching applications
Description
This device is an N-channel Power MOSFET
developed using the STripFET™ H6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low RDS(on) in all
packages.
Order code
STD19N3LLH6AG
Table 1: Device summary
Marking
Package
19N3LLH6
DPAK
Packing
Tape and reel
October 2015
DocID028432 Rev 2
This is information on a product in full production.
1/15
www.st.com
1 page  
STD19N3LLH6AG
Electrical characteristics
Symbol
ISD
ISDM(1)
VSD(2)
trr
Qrr
IRRM
Parameter
Table 8: Source-drain diode
Test conditions
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery
charge
Reverse recovery
current
VGS = 0 V, ISD = 10 A
ISD = 10 A, di/dt = 100 A/µs,
VDD = 24 V (see Figure 15:
"Test circuit for inductive load
switching and diode recovery
times")
Notes:
(1) Pulse width is limited by safe operating area.
(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
Min. Typ. Max. Unit
- 10 A
- 40 A
- 1.12 V
- 15.1
ns
- 7.5
nC
-1
A
DocID028432 Rev 2
5/15
5 Page 
STD19N3LLH6AG
Package information
Figure 20: DPAK (TO-252) recommended footprint (dimensions are in mm)
DocID028432 Rev 2
11/15
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