STD15P6F6AG Datasheet PDF - STMicroelectronics
Part Number | STD15P6F6AG | |
Description | P-channel Power MOSFET | |
Manufacturers | STMicroelectronics | |
Logo | ||
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Automotive-grade P-channel -60 V, 0.13 Ω typ., -10 A
STripFET™ F6 Power MOSFET in a DPAK package
Datasheet - production data
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
Features
Order code
STD15P6F6AG
VDSS
-60 V
RDS(on) max.
0.16 Ω
ID
-10 A
Designed for automotive applications and
AEC-Q101 qualified
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss
Applications
Switching applications
Description
This device is a P-channel Power MOSFET
developed using the STripFET™ F6 technology,
with a new trench gate structure. The resulting
Power MOSFET exhibits very low RDS(on) in all
packages.
S(3)
AM11258v1
Order code
STD15P6F6AG
Table 1: Device summary
Marking
Package
15P6F6
DPAK
Packaging
Tape and Reel
October 2015
DocID028450 Rev 1
This is information on a product in full production.
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www.st.com
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STD15P6F6AG
Symbol Parameter
ISD
Source-drain
current
ISDM(1)
Source-drain
current
(pulsed)
VSD (2)
Forward on
voltage
trr
Reverse
recovery time
Reverse
Qrr recovery
charge
Reverse
IRRM recovery
current
Table 7: Source drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
- -10 A
- -40 A
VGS = 0 V, ISD = -5 A
ISD = -10 A, di/dt = 100 A/µs, VDD = -48 V,
(see Figure 15: "Test circuit for inductive
load switching and diode recovery times")
- -1.1 V
- 20
ns
- 17.8
nC
- -1.8
A
Notes:
(1)Pulse width limited by safe operating area.
(2)Pulse test: pulse duration = 300 µs, duty cycle 1.5%
DocID028450 Rev 1
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