STD13N65M2 Datasheet PDF - STMicroelectronics
Part Number | STD13N65M2 | |
Description | N-channel Power MOSFET | |
Manufacturers | STMicroelectronics | |
Logo | ||
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N-channel 650 V, 0.37 Ω typ., 10 A MDmesh M2
Power MOSFET in a DPAK package
Datasheet − production data
Features
TAB
23
1
DPAK
Figure 1. Internal schematic diagram
, TAB
Order code
STD13N65M2
VDS
650 V
RDS(on) max ID
0.43 Ω
10 A
• Extremely low gate charge
• Excellent output capacitance (Coss) profile
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical
structure, the device exhibits low on-resistance
and optimized switching characteristics, rendering
it suitable for the most demanding high efficiency
converters.
Order codes
STD13N65M2
AM15572v1
Table 1. Device summary
Marking
Package
13N65M2
DPAK
Packaging
Tape and reel
December 2014
This is information on a product in full production.
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STD13N65M2
Electrical characteristics
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 7. Switching times
Test conditions
VDD = 325 V, ID = 5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 14 and 19)
Min. Typ. Max. Unit
- 11 - ns
- 7.8 - ns
- 38 - ns
- 12 - ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
VGS = 0 V, ISD = 10 A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 10 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 16)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 10 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 16)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
- 10 A
- 40 A
- 1.6 V
- 312
ns
- 2.7
µC
- 17.5
A
- 464
ns
- 4.1
µC
- 17.5
A
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Information | Total 16 Pages | |
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