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PDF STB80N4F6AG Data sheet ( Hoja de datos )
| Número de pieza | STB80N4F6AG | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STB80N4F6AG
Automotive-grade N-Channel 40 V, 5.5 mΩ typ.,80 A
STripFET™ F6 Power MOSFET in a D²PAK package
Datasheet - production data
TAB
3
1
D2PAK
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
Features
Order code
STB80N4F6AG
VDS
40 V
RDS(on) max.
6 mΩ
ID
80 A
Designed for automotive applications and
AEC-Q101 qualified
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss
Applications
Switching applications
Description
This device is an N-channel Power MOSFET
developed using the STripFET™ F6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low RDS(on) in all
packages.
S(3)
Order code
STB80N4F6AG
AM01475v1_Tab
Table 1: Device summary
Marking
Package
80N4F6
D²PAK
Packaging
Tape and Reel
November 2015
DocID027978 Rev 2
This is information on a product in full production.
1/15
www.st.com
1 page  
STB80N4F6AG
Symbol
ISD
ISDM(1)
VSD(2)
trr
QRR
IRRM
Parameter
Table 7: Source-drain diode
Test conditions
Source drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 40 A, VGS= 0 V
ISD= 80 A, di/dt = 100 A/μs,
VDD= 32 V
(See Figure 17: "Unclamped
inductive waveform")
Electrical characteristics
Min. Typ. Max. Unit
80 A
320 A
1.3
41.1
43.6
2.1
V
ns
nC
A
Notes:
(1)Pulse width limited by safe operating area.
(2)Pulsed: pulse duration = 300 μs, duty cycle 1.5%
DocID027978 Rev 2
5/15
5 Page 
STB80N4F6AG
Package mechanical data
Figure 20: D²PAK (TO-263) recommended footprint (dimensions are in mm)
DocID027978 Rev 2
11/15
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| PDF Descargar | [ Datasheet STB80N4F6AG.PDF ] | |
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