STB45N40DM2AG Datasheet PDF - STMicroelectronics
Part Number | STB45N40DM2AG | |
Description | N-channel Power MOSFET | |
Manufacturers | STMicroelectronics | |
Logo | ||
There is a preview and STB45N40DM2AG download ( pdf file ) link at the bottom of this page. Total 15 Pages |
Preview 1 page No Preview Available ! STB45N40DM2AG
Automotive-grade N-channel 400 V, 0.063 Ω typ., 38 A
MDmesh™ DM2 Power MOSFET in a D²PAK package
Datasheet - production data
Features
TAB
Order code
STB45N40DM2AG
VDS
400 V
RDS(on)
max.
0.072 Ω
ID
38 A
PTOT
250 W
3
1
D2PAK
Figure 1: Internal schematic diagram
Designed for automotive applications and
AEC-Q101 qualified
Fast-recovery body diode
Extremely low gate charge and input
capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications
Order code
STB45N40DM2AG
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Table 1: Device summary
Marking
Package
Packing
45N40DM2
D²PAK
Tape and reel
August 2015
DocID028285 Rev 1
This is information on a product in full production.
1/15
www.st.com
|
|
STB45N40DM2AG
Symbol
ISD
ISDM(1)
VSD(2)
trr
Qrr
IRRM
trr
Qrr
IRRM
Parameter
Table 8: Source-drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
Source-drain current
- 38 A
Source-drain current
(pulsed)
- 152 A
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGS = 0 V, ISD = 38 A
ISD = 38 A, di/dt = 100 A/µs,
VDD = 60 V (see Figure 16:
"Test circuit for inductive load
switching and diode recovery
times")
- 1.6 V
- 95
ns
- 0.4
µC
- 8.5
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 38 A, di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C (see
Figure 16: "Test circuit for
inductive load switching and
diode recovery times")
- 185
- 1.62
- 17.5
ns
µC
A
Notes:
(1) Pulse width is limited by safe operating area.
(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
Symbol
V(BR)GSO
Table 9: Gate-source Zener diode
Parameter
Test conditions
Gate-source breakdown voltage IGS = ±250 µA, ID = 0 A
Min. Typ. Max. Unit
±30 -
-V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection, thus eliminating the need for additional external componentry.
DocID028285 Rev 1
5/15
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for STB45N40DM2AG electronic component. |
Information | Total 15 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ STB45N40DM2AG.PDF Datasheet ] |
Share Link :
Electronic Components Distributor
An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists. |
SparkFun Electronics | Allied Electronics | DigiKey Electronics | Arrow Electronics |
Mouser Electronics | Adafruit | Newark | Chip One Stop |
Featured Datasheets
Part Number | Description | MFRS |
STB45N40DM2AG | The function is N-channel Power MOSFET. STMicroelectronics | |
Semiconductors commonly used in industry:
1N4148 |  
BAW56 |
1N5400 |
NE555 | | ||
Quick jump to:
STB4
1N4
2N2
2SA
2SC
74H
BC
HCF
IRF
KA |