DataSheet39.com

What is STB45N40DM2AG?

This electronic component, produced by the manufacturer "STMicroelectronics", performs the same function as "N-channel Power MOSFET".


STB45N40DM2AG Datasheet PDF - STMicroelectronics

Part Number STB45N40DM2AG
Description N-channel Power MOSFET
Manufacturers STMicroelectronics 
Logo STMicroelectronics Logo 


There is a preview and STB45N40DM2AG download ( pdf file ) link at the bottom of this page.





Total 15 Pages



Preview 1 page

No Preview Available ! STB45N40DM2AG datasheet, circuit

STB45N40DM2AG
Automotive-grade N-channel 400 V, 0.063 Ω typ., 38 A
MDmesh™ DM2 Power MOSFET in a D²PAK package
Datasheet - production data
Features
TAB
Order code
STB45N40DM2AG
VDS
400 V
RDS(on)
max.
0.072 Ω
ID
38 A
PTOT
250 W
3
1
D2PAK
Figure 1: Internal schematic diagram
Designed for automotive applications and
AEC-Q101 qualified
Fast-recovery body diode
Extremely low gate charge and input
capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications
Order code
STB45N40DM2AG
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Table 1: Device summary
Marking
Package
Packing
45N40DM2
D²PAK
Tape and reel
August 2015
DocID028285 Rev 1
This is information on a product in full production.
1/15
www.st.com

line_dark_gray
STB45N40DM2AG equivalent
STB45N40DM2AG
Symbol
ISD
ISDM(1)
VSD(2)
trr
Qrr
IRRM
trr
Qrr
IRRM
Parameter
Table 8: Source-drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
Source-drain current
- 38 A
Source-drain current
(pulsed)
- 152 A
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGS = 0 V, ISD = 38 A
ISD = 38 A, di/dt = 100 A/µs,
VDD = 60 V (see Figure 16:
"Test circuit for inductive load
switching and diode recovery
times")
- 1.6 V
- 95
ns
- 0.4
µC
- 8.5
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 38 A, di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C (see
Figure 16: "Test circuit for
inductive load switching and
diode recovery times")
- 185
- 1.62
- 17.5
ns
µC
A
Notes:
(1) Pulse width is limited by safe operating area.
(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
Symbol
V(BR)GSO
Table 9: Gate-source Zener diode
Parameter
Test conditions
Gate-source breakdown voltage IGS = ±250 µA, ID = 0 A
Min. Typ. Max. Unit
±30 -
-V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection, thus eliminating the need for additional external componentry.
DocID028285 Rev 1
5/15


line_dark_gray

Preview 5 Page


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for STB45N40DM2AG electronic component.


Information Total 15 Pages
Link URL [ Copy URL to Clipboard ]
Download [ STB45N40DM2AG.PDF Datasheet ]

Share Link :

Electronic Components Distributor


An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists.


SparkFun Electronics Allied Electronics DigiKey Electronics Arrow Electronics
Mouser Electronics Adafruit Newark Chip One Stop


Featured Datasheets

Part NumberDescriptionMFRS
STB45N40DM2AGThe function is N-channel Power MOSFET. STMicroelectronicsSTMicroelectronics

Semiconductors commonly used in industry:

1N4148   |   BAW56   |   1N5400   |   NE555   |  

LM324   |   BC327   |   IRF840  |   2N3904   |  



Quick jump to:

STB4     1N4     2N2     2SA     2SC     74H     BC     HCF     IRF     KA    

LA     LM     MC     NE     ST     STK     TDA     TL     UA    



Privacy Policy   |    Contact Us     |    New    |    Search