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PDF STB43N65M5 Data sheet ( Hoja de datos )

Número de pieza STB43N65M5
Descripción N-channel Power MOSFET
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



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No Preview Available ! STB43N65M5 Hoja de datos, Descripción, Manual

STB43N65M5
Automotive-grade N-channel 650 V, 0.058 Ω typ., 42 A
MDmesh™ M5 Power MOSFET in a D²PAK package
Datasheet - production data
TAB
3
1
D2PAK
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
S(3)
Features
Order code
VDS RDS(on) max. ID
PTOT
STB43N65M5 650 V 0.063 Ω 42 A 250 W
Designed for automotive applications and
AEC-Q101 qualified
Extremely low RDS(on)
Low gate charge and input capacitance
Excellent switching performance
100% avalanche tested
Applications
Switching applications
Description
This device is an N-channel Power MOSFET
based on the MDmesh™ M5 innovative vertical
process technology combined with the well-
known PowerMESH™ horizontal layout. The
resulting product offers extremely low on-
resistance, making it particularly suitable for
applications requiring high power and superior
efficiency.
Order code
STB43N65M5
AM01475v1_Tab
Table 1: Device summary
Marking
Package
43N65M5
D²PAK
Packing
Tape and reel
July 2015
DocID028150 Rev 1
This is information on a product in full production.
1/16
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STB43N65M5 pdf
STB43N65M5
Electrical characteristics
Symbol
ISD
ISDM(1)
VSD(2)
trr
Qrr
IRRM
trr
Qrr
IRRM
Parameter
Table 8: Source-drain diode
Test conditions
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery
charge
Reverse recovery
current
VGS = 0 V, ISD = 42 A
ISD = 42 A, di/dt = 100 A/µs,
VDD = 100 V (see Figure 16:
"Test circuit for inductive load
switching and diode recovery
times")
Reverse recovery time
Reverse recovery
charge
Reverse recovery
current
ISD = 42 A, di/dt = 100 A/µs,
VDD = 100 V, Tj = 150 °C (see
Figure 16: "Test circuit for
inductive load switching and
diode recovery times")
Min.
-
-
-
-
-
-
-
-
-
Typ.
420
8
40
530
12
44
Max. Unit
42 A
168 A
1.6 V
ns
µC
A
ns
µC
A
Notes:
(1) Pulse width is limited by safe operating area.
(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
DocID028150 Rev 1
5/16

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STB43N65M5 arduino
STB43N65M5
Dim.
A
A1
b
b2
c
c2
D
D1
D2
E
E1
E2
e
e1
H
J1
L
L1
L2
R
V2
Package information
Table 9: D²PAK (TO-263) type A package mechanical data
mm
Min.
Typ.
Max.
4.40 4.60
0.03 0.23
0.70 0.93
1.14 1.70
0.45 0.60
1.23 1.36
8.95
7.50 7.75
1.10 1.30
9.35
8.00
1.50
10
8.50 8.70
10.40
8.90
6.85 7.05
2.54
7.25
4.88 5.28
15 15.85
2.49 2.69
2.29 2.79
1.27 1.40
1.30
0.4
1.75
0° 8°
DocID028150 Rev 1
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