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PDF STB35N60DM2 Data sheet ( Hoja de datos )
| Número de pieza | STB35N60DM2 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STB35N60DM2
N-channel 600 V, 0.094 Ω typ., 28 A MDmesh™ DM2
Power MOSFET in a D²PAK package
Datasheet - production data
TAB
3
1
D2PAK
Figure 1: Internal schematic diagram
Features
Order code
VDS
STB35N60DM2 600 V
RDS(on)
max.
0.110 Ω
ID PTOT
28 A 210 W
Fast-recovery body diode
Extremely low gate charge and input
capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Order code
STB35N60DM2
Table 1: Device summary
Marking
Package
35N60DM2
D²PAK
Packing
Tape and reel
September 2015
DocID028331 Rev 1
This is information on a product in full production.
1/15
www.st.com
1 page  
STB35N60DM2
Symbol Parameter
td(on)
Turn-on
delay time
tr
td(off)
Rise time
Turn-off
delay time
tf Fall time
Table 7: Switching times
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
- 21.2 -
VDD = 300 V, ID = 14 A RG = 4.7 Ω,
VGS = 10 V (see Figure 14: "Test circuit for
- 17 -
resistive load switching times" and Figure 19:
"Switching time waveform")
- 68 -
- 10.7 -
ns
Symbol Parameter
ISD
Source-drain
current
ISDM(1)
Source-drain
current
(pulsed)
VSD(2)
Forward on
voltage
trr
Reverse
recovery time
Reverse
Qrr recovery
charge
Reverse
IRRM recovery
current
trr
Reverse
recovery time
Reverse
Qrr recovery
charge
Reverse
IRRM recovery
current
Table 8: Source-drain diode
Test conditions
Min. Typ. Max. Unit
- 28 A
- 112 A
VGS = 0 V, ISD = 28 A
ISD = 28 A, di/dt = 100 A/µs, VDD = 60 V
(see Figure 16: "Test circuit for inductive
load switching and diode recovery times")
- 1.6 V
- 120
ns
- 572
nC
- 10.2
A
ISD = 28 A, di/dt = 100 A/µs, VDD = 60 V,
Tj = 150 °C (see Figure 16: "Test circuit for
inductive load switching and diode
recovery times")
- 215
- 1.89
- 17.7
ns
µC
A
Notes:
(1) Pulse width is limited by safe operating area.
(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
Symbol
V(BR)GSO
Table 9: Gate-source Zener diode
Parameter
Test conditions
Gate-source breakdown voltage IGS = ±250 µA, ID = 0 A
Min. Typ. Max. Unit
±30 -
-V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection, thus eliminating the need for additional external componentry.
DocID028331 Rev 1
5/15
5 Page 
STB35N60DM2
Package information
Figure 21: D²PAK (TO-263) recommended footprint (dimensions are in mm)
DocID028331 Rev 1
11/15
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