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PDF STP28N60DM2 Data sheet ( Hoja de datos )
| Número de pieza | STP28N60DM2 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STB28N60DM2, STP28N60DM2,
STW28N60DM2
N-channel 600 V, 0.13 Ω typ., 21 A MDmesh™ DM2
Power MOSFETs in D²PAK, TO-220 and TO-247 packages
Datasheet - production data
Features
Order code
STB28N60DM2
STP28N60DM2
STW28N60DM2
VDS @
TJmax.
600 V
RDS(on)
max.
ID PTOT
0.16 Ω 21 A 170 W
Figure 1: Internal schematic diagram
Fast-recovery body diode
Extremely low gate charge and input
capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications
Order code
STB28N60DM2
STP28N60DM2
STW28N60DM2
Description
These high voltage N-channel Power MOSFETs
are part of the MDmesh™ DM2 fast recovery
diode series. They offer very low recovery charge
(Qrr) and time (trr) combined with low RDS(on),
rendering them suitable for the most demanding
high efficiency converters and ideal for bridge
topologies and ZVS phase-shift converters.
Table 1: Device summary
Marking
Package
Packing
D²PAK
Tape and reel
28N60DM2
TO-220
Tube
TO-247
Tube
December 2015
DocID027040 Rev 4
This is information on a product in full production.
1/20
www.st.com
1 page  
STB28N60DM2, STP28N60DM2, STW28N60DM2
Table 8: Source-drain diode
Electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD(1) Source-drain current
- 21 A
ISDM(2)
Source-drain current
(pulsed)
- 84 A
VSD(3) Forward on voltage
VGS = 0 V, ISD = 21 A
- 1.6 V
trr Reverse recovery time
Qrr Reverse recovery charge
IRRM Reverse recovery current
ISD = 21 A, di/dt = 100 A/µs,
- 140
VDD = 60 V (see Figure 20:
"Test circuit for inductive load
-
0.5
switching and diode recovery - 7.4
times")
ns
µC
A
trr Reverse recovery time
Qrr Reverse recovery charge
IRRM Reverse recovery current
ISD = 21 A, di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C (see
Figure 20: "Test circuit for
inductive load switching and
diode recovery times")
- 309
- 2.6
- 16.8
ns
µC
A
Notes:
(1) Limited by maximum junction temperature.
(2) Pulse width is limited by safe operating area.
(3) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
Symbol
V(BR)GSO
Table 9: Gate-source Zener diode
Parameter
Test conditions
Gate-source breakdown voltage IGS = ±250 µA, ID = 0 A
Min. Typ. Max. Unit
±30 -
-V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection, thus eliminating the need for additional external componentry.
DocID027040 Rev 4
5/20
5 Page 
STB28N60DM2, STP28N60DM2, STW28N60DM2
Package information
Table 10: D²PAK (TO-263) type A package mechanical data
Dim.
Min.
mm
Typ.
Max.
A 4.40
4.60
A1 0.03
0.23
b 0.70
0.93
b2 1.14
1.70
c 0.45
0.60
c2 1.23
1.36
D 8.95
9.35
D1 7.50 7.75
8.00
D2 1.10 1.30
1.50
E 10
10.40
E1 8.50 8.70
8.90
E2 6.85 7.05
7.25
e 2.54
e1 4.88
5.28
H 15
15.85
J1 2.49
2.69
L 2.29
2.79
L1 1.27
1.40
L2 1.30
1.75
R 0.4
V2 0°
8°
DocID027040 Rev 4
11/20
11 Page | ||
| Páginas | Total 20 Páginas | |
| PDF Descargar | [ Datasheet STP28N60DM2.PDF ] | |
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