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Número de pieza | STB18N60DM2 | |
Descripción | N-channel Power MOSFET | |
Fabricantes | STMicroelectronics | |
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No Preview Available ! STB18N60DM2
N-channel 600 V, 0.260 Ω typ., 12 A MDMesh™ DM2
Power MOSFET in a D²PAK package
Datasheet - production data
TAB
2
3
1
D²PAK
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
Features
Order code
STB18N60DM2
VDS
600 V
RDS(on) max.
0.295 Ω
ID
12 A
Fast-recovery body diode
Extremely low gate charge and input
capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Order code
STB18N60DM2
S(3)
AM15572v1_tab
Table 1: Device summary
Marking
Package
18N60DM2
D²PAK
Packing
Tape and Reel
January 2016
DocID027677 Rev 3
This is information on a product in full production.
1/15
www.st.com
1 page STB18N60DM2
Symbol
Parameter
Table 8: Source-drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
ISD
ISDM(1)
VSD (2)
trr
Qrr
IRRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGS = 0 V, ISD = 12 A
ISD = 12 A, di/dt = 100 A/µs,
VDD = 60 V (see Figure 16:
"Test circuit for inductive load
switching and diode recovery
times")
- 12 A
- 48 A
- 1.6 V
- 125
ns
- 0.675
nC
- 11
A
trr Reverse recovery time
ISD = 12 A, di/dt = 100 A/µs,
Qrr
Reverse recovery charge
VDD = 60 V, Tj = 150 °C (see
Figure 16: "Test circuit for
IRRM
Reverse recovery current inductive load switching and
diode recovery times")
- 190
- 1225
- 13
ns
nC
A
Notes:
(1) Pulse width is limited by safe operating area.
(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
DocID027677 Rev 3
5/15
5 Page STB18N60DM2
Package information
Figure 21: D²PAK (TO-263) recommended footprint (dimensions are in mm)
DocID027677 Rev 3
11/15
11 Page |
Páginas | Total 15 Páginas | |
PDF Descargar | [ Datasheet STB18N60DM2.PDF ] |
Número de pieza | Descripción | Fabricantes |
STB18N60DM2 | N-channel Power MOSFET | STMicroelectronics |
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