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Datasheet D45H11FP Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | D45H11FP | Low Vcesat PNP Epitaxial Planar Transistor CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
Spec. No. : C607FP Issued Date : 2008.04.07 Revised Date : 2013.10.29 Page No. : 1/6
D45H11FP
Features
• Low VCE(sat) • High BVCEO • Excellent current gain characteristics • Pb-free lead plating package
Symbol
D45H11FP
|  CYStech Electronics | transistor |
| 2 | D45H11FP | Complementary power transistors D44H11FP D45H11FP
Complementary power transistors
Features
■ Low collector-emitter saturation voltage ■ Fast switching speed
Applications
■ Power amplifier ■ Switching circuits
Description
These low voltage transistors are housed in fully isolated TO-220FP packages and form a complementary |  STMicroelectronics | transistor |
D45 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | D4503B | Hex 2 State Buffer ETC buffer | | |
| 2 | D45128163G5 | UPD45128163G5
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD45128441, 45128841, 45128163
128M-bit Synchronous DRAM 4-bank, LVTTL
Description
The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 �  NEC data | | |
| 3 | D45128441G5 | UPD45128441G5 DATA SHEET
MOS INTEGRATED CIRCUIT
µPD45128441, 45128841, 45128163
128M-bit Synchronous DRAM 4-bank, LVTTL
Description
The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 � NEC data | | |
| 4 | D45128841G5 | UPD45128841G5
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD45128441, 45128841, 45128163
128M-bit Synchronous DRAM 4-bank, LVTTL
Description
The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 � NEC data | | |
| 5 | D4515 | Low-frequency amplification shell rated bipolar transistors R
D
2004.01
1/5
2004.01
2/5
(mA)
Ic (A)
10
500mA
450mA 400mA
350mA 300mA 250mA
200mA
5 150mA
100mA
50mA
2
01
-
34
VCE (V)
5
2004.01
3/5
2004.01
4/5
2004.01
5/5
 JILIN SINO transistor | | |
| 6 | D4515 | NPN Transistor ATE transistor | | |
| 7 | D4516161CG5 | UPD4516161CG5
www.Da NEC data | |
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