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PDF IRS21853SPBF Data sheet ( Hoja de datos )
| Número de pieza | IRS21853SPBF | |
| Descripción | DUAL HIGH SIDE DRIVER IC | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Data Sheet No. PD60294
Features
• Gate drive supply range from 10 V to 20 V
• Under voltage lockout for VCC & VBS1,2
• 5 V input logic compatible
• Tolerant to negative transient voltage
• Matched propagation delays for all channels
• RoHS compliant
Descriptions
The IRS21853 is a high voltage, high speed power
MOSFET and IGBT dual high-side driver with propagation
delay matched output channels. Proprietary HVIC and
latch immune CMOS technologies enable ruggedized
monolithic construction. The floating logic input is
compatible with standard CMOS or LSTTL output, down to
3.3 V logic and can be operated up to 600 V above the
ground. The output driver features a high pulse current
buffer stage designed for minimum driver cross-
conduction. The floating channel can be used to drive an
N-channel power MOSFET or IGBT in the high-side
configuration, which operates up to 600 V.
Typical Connection Diagram
IRS21853SPBF
DUAL HIGH SIDE DRIVER IC
Product Summary
VOFFSET
VOUT
ton/toff (typ)
Io+/-
Delay Matching
600 V max
10 V to 20 V
170 ns/170 ns
2 A/2 A
40 ns
Package
16-Lead SOIC (narrow body)
1
2
3 VCC
4 COM
5 HIN1
6 HIN2
7
8
VB1 16
HO1 15
VS1 14
IRS21853
SON16
13
12
VS2 11
HO2 10
VB2 9
+VDC1
+VDC2
1 page  
IRS21853SPBF
Dynamic Electrical Characteristics (All values are target data)
(VCC-COM)= (VB1,2-VS1,2)=15 V. TA = 25 oC unless otherwise specified. CL = 1000 pF unless otherwise specified. All
parameters are reference to COM.
Symbol
Definition
Min Typ Max Units Test Conditions
ton Turn-on propagation delay (HO1,2) --- 170 ---
(Vs1,2-COM)=0 V
toff Turn-off propagation delay (HO1,2) --- 170 ---
tr Turn-on rise time
--- 15 50
ns
(Vs1,2-COM)=600 V
tf Turn-off fall time
--- 15 50
MT Delay matching (Note 1)
--- --- 40
Note 4:Max(ton,HO1, ton,HO2)- Min(ton,HO1, ton,HO2); Max(toff,HO1, toff,HO2)- Min(toff,HO1, toff,HO2)
5
5 Page 
2.0
1.5
Max.
1.0
0.5
0.0
-50 -25
0 25 50 75
Temperature (oC)
100 125
Figure 9A. High Level Output
vs. Tem perature
0.20
0.15
0.10
0.05
Max.
0.00
-50 -25
0 25 50 75
Temperature (oC)
100 125
Figure 10A. Low Level Output
vs.Tem perature
500
400
300
200
100
M ax.
0
-50 -25
0 25 50 75
Temperature (oC)
100 125
Figure 11A. Offset Supply Leakage Current
vs. Tem perature
IRS21853SPBF
2.0
1.5
Max.
1.0
0.5
0.0
10
12 14 16 18
Vcc Supply Voltage (V)
Figure 9B. High Level Output
vs. Supply Voltage
20
0 .2 0
0 .15
0.10
Max.
0 .0 5
0 .0 0
10
12 14 16 18
Vcc Supply Voltage (V)
Figure 10B. Low Level Output
vs. Supply Voltage
20
500
400
300
200
100 Max.
0
0 100 200 300 400 500 600
VB Boost Voltage (V)
Figure 11B. Offset Supply Leakage
Current vs. Supply Voltage
11
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet IRS21853SPBF.PDF ] | |
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