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Si2351DS PDF Datasheet - Vishay

Part Number Si2351DS
Description P-Channel 20-V (D-S) MOSFET
Manufacturers Vishay 
Logo Vishay Logo 
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Si2351DS datasheet, circuit
P-Channel 20-V (D-S) MOSFET
Si2351DS
Vishay Siliconix
MOSFET PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (A)a
0.115 at VGS = - 4.5 V
- 3.0
- 20
0.205 at VGS = - 2.5 V
- 2.2
Qg (Typ.)
3.2 nC
FEATURES
Halogen-free Option Available
• TrenchFET® Power MOSFET
• PWM Optimized
• 100 % Rg Tested
RoHS
COMPLIANT
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2351DS (G1)*
* Marking Code
Ordering Information: Si2351DS-T1-E3 (Lead (Pb)-free)
Si2351DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
5s
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 130 °C/W.
Symbol
RthJA
RthJF
Typical
90
60
Limit
- 20
± 12
- 2.8
- 2.4
- 2.2b, c
- 1.8b, c
- 10
- 2.0
- 0.91b, c
2.1
1.5
1.0b, c
0.7b, c
- 55 to 150
Maximum
115
75
Unit
V
A
W
°C
Unit
°C/W
Document Number: 73702
S-80642-Rev. C, 24-Mar-08
www.vishay.com
1

1 page
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Si2351DS pdf, schematic
Si2351DS
Vishay Siliconix
MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS VDS = 0 V, ID = - 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = - 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
Zero Gate Voltage Drain Current
IDSS
VDS = - 20 V, VGS = 0 V
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS - 5 V, VGS = - 4.5 V
Drain-Source On-State Resistancea
RDS(on)
VGS = - 4.5 V, ID = - 2.4 A
VGS = - 2.5 V, ID = - 1.8 A
Forward Transconductancea
gfs VDS = - 10 V, ID = - 2.4 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = - 10 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = - 10 V, VGS = - 5.0 V, ID = - 2.4 A
Gate-Source Charge
Gate-Drain Charge
Qgs VDS = - 10 V, VGS = - 4.5 V, ID = - 2.4 A
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = - 10 V, RL = 5.26 Ω
ID - 1.9 A, VGEN = - 4.5 V, RG = 1 Ω
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD IS = - 2.0 A
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = - 2.0 A, di/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
- 20
- 0.6
- 10
Typ.
Max.
Unit
- 16.7
2.1
0.092
0.164
5.5
- 1.5
± 100
-1
- 10
0.115
0.205
V
mV/°C
V
nA
µA
A
Ω
S
250
80
55
3.4
3.2
0.5
1.4
8.5
9
30
32
16
- 0.8
17
5
14
3
5.1
5
13
14
45
48
24
- 2.0
- 10
- 1.2
26
8
pF
nC
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73702
S-80642-Rev. C, 24-Mar-08

2 Page
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Si2351DS equivalent
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
4 2.4
Si2351DS
Vishay Siliconix
3 1.8
2 1.2
1 0.6
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
0.0
0
25 50 75 100 125 150
TC - Case Temperature (°C)
Power Derating, Junction-to-Foot
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73702
S-80642-Rev. C, 24-Mar-08
www.vishay.com
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