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RQ3E080BN PDF Datasheet - Rohm

Part Number RQ3E080BN
Description N-ch 30V 8A Middle Power MOSFET
Manufacturers Rohm 
Logo Rohm Logo 
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Preview ( 12 pages )
		
RQ3E080BN datasheet, circuit
RQ3E080BN
  Nch 30V 8A Middle Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
30V
15.2mΩ
±8A
2W
lFeatures
1) Low on - resistance.
2) High Power Package (HSMT8).
3) Pb-free lead plating ; RoHS compliant.
4) Halogen Free.
lOutline
HSMT8
 
 
      
lInner circuit
   Datasheet
      
 
 
 
      
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
330
lApplication
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
12
3000
Taping code
TB
Marking
E080BN
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Range of storage temperature
VDSS
ID
ID,pulse*1
VGSS
PD*2
Tj
Tstg
30
±8
±32
±20
2
150
-55 to +150
V
A
A
V
W
                                              
                                                                                        
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/11
20141107 - Rev.001    

1 page
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RQ3E080BN pdf, schematic
RQ3E080BN
          
lThermal resistance
Parameter
Thermal resistance, junction - ambient
                Datasheet
                    
Symbol
RthJA*2
Values
Min. Typ. Max.
- 62.5 -
Unit
/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
Breakdown voltage
temperature coefficient
Zero gate voltage
drain current
 ΔV(BR)DSS  ID = 1mA
   ΔTj     referenced to 25
IDSS VDS = 30V, VGS = 0V
Gate - Source leakage current IGSS VGS = ±20V, VDS = 0V
Gate threshold voltage
Gate threshold voltage
temperature coefficient
VGS(th) VDS = 10V, ID = 1mA
 ΔVGS(th)   ID = 1mA
   ΔTj     referenced to 25
Static drain - source
on - state resistance
RDS(on)*3 VGS = 10V, ID = 8A
VGS = 4.5V, ID = 8A
Gate input resistance
RG  
Transconductance
gfs*3 VDS = 5V, ID = 8A
Values
Unit
Min. Typ. Max.
30 - - V
- 21 - mV/
- - 1 μA
- - ±100 nA
1.0 - 2.5 V
- -3 - mV/
- 11.0 15.2
- 16.0 22.0
- 3.2 -
Ω
7 - -S
*1 Pw10μs , Duty cycle1%
*2 Mounted on a ceramic boad (30×30×0.8mm)
*3 Pulsed
                                             
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
2/11
                                          
20141107 - Rev.001

2 Page
line_dark_gray
RQ3E080BN equivalent
RQ3E080BN
      
lElectrical characteristic curves
Fig.5 Typical Output Characteristics(I)
        
Datasheet
Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs. Junction
 Temperature
                                                                                          
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
5/11
20141107 - Rev.001

5 Page
line_blue
RQ3E080BN diode, scr
RQ3E080BN
      
lElectrical characteristic curves
Fig.17 Typical Capacitance vs. Drain -
 Source Voltage
        
Datasheet
Fig.18 Switching Characteristics
Fig.19 Dynamic Input Characteristics
Fig.20 Source Current vs. Source Drain
 Voltage
                                                                                          
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
9/11
20141107 - Rev.001

9 Page





Information Total 12 Pages
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