H30R1602 Datasheet PDF - Infineon
| Part Number | H30R1602 | |
| Description | IHW30N160R2 | |
| Manufacturers | Infineon | |
| Logo |  |
|
|
There is a preview and H30R1602 download ( pdf file ) link at the bottom of this page. Total ( 12 pages ) | ||
Preview 1 page No Preview Available !
IHW30N160R2
Soft Switching Series
TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode
Features:
• Powerful monolithic Body Diode with very low forward voltage
• Body diode clamps negative voltages
• Trench and Fieldstop technology for 1600 V applications offers :
- very tight parameter distribution
G
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
• Low EMI
• Qualified according to JEDEC1 for target applications
PG-TO-247-3
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Applications:
• Inductive Cooking
• Soft Switching Applications
C
E
Type
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Marking
Package
IHW30N160R2
1600V 30A
1.8V
175°C H30R1602 PG-TO-247-3
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area (VCE ≤ 1600V, Tj ≤ 175°C)
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Diode surge non repetitive current, tp limited by Tjmax
TC = 25°C, tp = 10ms, sine halfwave
TC = 25°C, tp ≤ 2.5µs, sine halfwave
TC = 100°C, tp ≤ 2.5µs, sine halfwave
Gate-emitter voltage
Transient Gate-emitter voltage (tp < 10 µs, D < 0.01)
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
VCE
IC
ICpuls
-
IF
IFpuls
IFSM
VGE
Ptot
Tj
Tstg
-
1600
60
30
90
90
60
30
90
50
130
120
±20
±25
312
-40...+175
-55...+175
260
V
A
V
W
°C
1 J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 2.1 Nov 09
|
| |
 
IHW30N160R2
Soft Switching Series
80A
70A VGE=20V
60A 15V
13V
50A 11V
40A 9V
7V
30A
20A
10A
0A
0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
80A
70A VGE=20V
15V
60A 13V
50A 11V
9V
40A 7V
30A
20A
10A
0A
0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
80A
70A
60A
50A
40A
30A
TJ=175°C
20A
25°C
10A
0A
0V 2V 4V 6V 8V 10V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=20V)
3.0V
2.5V
2.0V
1.5V
1.0V
IC=60A
IC=30A
IC=15A
0.5V
0.0V
0°C
50°C
100°C
150°C
Figure 8.
TJ, JUNCTION TEMPERATURE
Typical collector-emitter saturation
voltage as a function of junction
temperature
(VGE =15V)
Power Semiconductors
5
Rev. 2.1 Nov 09
Preview 5 Page |
| Information | Total 12 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Product Image and Detail view |  1. - 1600V, 30A, IGBT (Transistor) [ Learn More ] | |
| Download | [ H30R1602.PDF Datasheet ] | |
Share Link :
Electronic Components Distributor
| SparkFun Electronics | Allied Electronics | DigiKey Electronics | Arrow Electronics |
| Mouser Electronics | Adafruit | Element14 | Chip One Stop |
Featured Datasheets
| Part Number | Description | Manufacturers |
| H30R1602 | The function is IHW30N160R2. | Infineon |
Quick jump to: H30R 1N4 2N2 2SA 2SC 74H ADC BC BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA | ||