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Número de pieza | C2612 | |
Descripción | NPN Transistor - 2SC2612 | |
Fabricantes | Hitachi Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de C2612 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! 2SC2612
Silicon NPN Triple Diffused
Application
High voltage, high speed and high power switching
Outline
TO-220AB
1
23
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
I C(peak)
IB
PC * 1
Tj
Tstg
1. Base
2. Collector
(Flange)
3. Emitter
Ratings
500
400
7
3
6
1.5
30
150
–55 to +150
Unit
V
V
V
A
A
A
W
°C
°C
1 page Base to Emitter Saturation Voltage
vs. Collector Current
10
3
1.0
0.3
0.1
0.03
0.01
0.005 0.01
TC = 25°C
IC = 5 IB
0.03 0.1 0.3 1.0
Collector current IC (A)
35
2SC2612
Switching Time vs. Collector Current
10
3
tstg
1.0
tf
0.3
0.1 ton
0.03
0.01
0.005 0.01
IC = 5 IB1 = –5 IB2
VCC = 150 V
0.03 0.1 0.3 1.0
Collector current IC (A)
35
Switching Time vs. Case Temperature
5
3
tstg
1.0
tf
0.3
0.1
0.05
0
ton
IC = 3 A
IB1 = – IB2 = 0.6 A
RL = 50 Ω
VCC = 150 V
25 50 75 100
Case temperature TC (°C)
125
5
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet C2612.PDF ] |
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