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Número de pieza | BGA735N16 | |
Descripción | High Linearity Tri-Band LTE/UMTS LNA | |
Fabricantes | Infineon | |
Logotipo | ||
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High Linearity Tri-Band LTE/UMTS LNA
(2600/2300/2100, 1900/1800, 900/800/700 MHz)
Data Sheet
Revision 3.8, 2010-12-23
RF & Protection Devices
1 page BGA735N16
High Linearity Tri-Band LTE/UMTS LNA
List of Figures
List of Figures
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Figure 7
Figure 8
Figure 9
Figure 10
Block Diagram of Tri-Band LNA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Application Circuit with Chip Outline (Top View) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Application Circuit with Chip Outline (Top View) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Application Circuit with Chip Outline (Top View) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Application Circuit with Chip Outline (Top View) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Application Board Layout on 3-layer FR4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Cross-Section View of Application Board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Detail of Application Board Layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Recommended Footprint and Stencil Layout for the TSNP-16-1 Package . . . . . . . . . . . . . . . . . . 31
Package Outline (Top, Side and Bottom View) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Data Sheet
5 Revision 3.8, 2010-12-23
5 Page BGA735N16
High Linearity Tri-Band LTE/UMTS LNA
Electrical Characteristics
2.6 Supply Current Characteristics; TA = 25 °C
Supply current high gain mode versus resistance of reference resistor RREF (see Figure 2 on Page 24; low gain
mode supply current is independent of reference resistor).
Supply Current Highband ICC = f (RREF)
VCC = 2.8 V
Supply Current Midband ICC = f (RREF)
VCC = 2.8 V
9
8
7
6
5
4
3
2
1
10
R
REF
[kΩ]
Supply Current Lowband ICC = f (RREF)
VCC = 2.8 V
100
9
8
7
6
5
4
3
2
1
10
R
REF
[kΩ]
100
9
8
7
6
5
4
3
2
1
10
RREF [kΩ]
100
Data Sheet
11 Revision 3.8, 2010-12-23
11 Page |
Páginas | Total 30 Páginas | |
PDF Descargar | [ Datasheet BGA735N16.PDF ] |
Número de pieza | Descripción | Fabricantes |
BGA735N16 | High Linearity Tri-Band LTE/UMTS LNA | Infineon |
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