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Datasheet BGA622L7 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1BGA622L7Silicon Germanium Wide Band Low Noise Amplifier

Data Sheet, Rev. 2.2, April 2008 BGA622L7 Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection Small Signal Discretes Edition 2008-04-14 Published by Infineon Technologies AG, 81726 München, Germany © Infineon Technologies AG 2008. All Rights Reserved. Attention please! The in
Infineon
Infineon
amplifier


BGA Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1BGA2001Silicon MMIC amplifier

DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BGA2001 Silicon MMIC amplifier Product specification Supersedes data of 1999 Jul 23 1999 Aug 11 Philips Semiconductors Product specification Silicon MMIC amplifier FEATURES • Low current, low voltage • Very high power gain • Low noise figure �
NXP Semiconductors
NXP Semiconductors
amplifier
2BGA2003Silicon MMIC amplifier

DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BGA2003 Silicon MMIC amplifier Product specification Supersedes data of 1999 Feb 25 1999 Jul 23 Philips Semiconductors Product specification Silicon MMIC amplifier FEATURES • Low current • Very high power gain • Low noise figure • Integrated
NXP Semiconductors
NXP Semiconductors
amplifier
3BGA20121900 MHz high linear low noise amplifier

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BGA2012 1900 MHz high linear low noise amplifier Product specification Supersedes data of 2000 Sep 06 2000 Dec 04 Philips Semiconductors Product specification 1900 MHz high linear low noise amplifier FEATURES • Low current, low volt
NXP Semiconductors
NXP Semiconductors
amplifier
4BGA2022MMIC mixer

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BGA2022 MMIC mixer Objective specification Supersedes data of 1999 Feb 25 1999 Jul 23 Philips Semiconductors Objective specification MMIC mixer FEATURES • Large frequency range: – Cellular band (900 MHz) – PCS band (1900 MHz) –
NXP Semiconductors
NXP Semiconductors
data
5BGA2031MMIC variable gain amplifier

DISCRETE SEMICONDUCTORS DATA SHEET M3D452 BGA2031 MMIC variable gain amplifier Preliminary specification Supersedes data of 1999 Feb 26 1999 Jul 23 Philips Semiconductors Preliminary specification MMIC variable gain amplifier FEATURES • High gain • Excellent adjacent channel power rejec
NXP Semiconductors
NXP Semiconductors
amplifier
6BGA2031-1MMIC variable gain amplifier

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage MBD128 BGA2031/1 MMIC variable gain amplifier Product specification Supersedes data of 2000 Mar 02 2001 Feb 05 NXP Semiconductors MMIC variable gain amplifier Product specification BGA2031/1 FEATURES  High gain  Excellent adjacent chan
NXP Semiconductors
NXP Semiconductors
amplifier
7BGA231N7Silicon Germanium GNSS Low Noise Amplifier

BGA231N7 Silicon Germanium GNSS Low Noise Amplifier Data Sheet Revision 1.0, 2013-01-30 RF & Protection Devices Edition 2013-01-30 Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this documen
Infineon
Infineon
amplifier



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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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