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PDF SMMB912D Data sheet ( Hoja de datos )
| Número de pieza | SMMB912D | |
| Descripción | Dual N-Channel MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
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New Product
SMMB912DK
Vishay Siliconix
Dual N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) at VGS = 4.5 V
RDS(on) (Ω) at VGS = 2.5 V
RDS(on) (Ω) at VGS = 1.8 V
ID (A)a
Configuration
20
0.216
0.268
0.375
1.5
Dual
PowerPAK SC75-6L-Dual
D1 D2
1
S1
D1
D1
6
G2
5
1.60 mm
S2
4
2
G1
D2
3
D2
1.60 mm
G1 G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
Marking Code
Part # code
MBX
XXX
Lot Traceability
and Date code
FEATURES
• High Quality Manufacturing Process Using SMM
Process Flow
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK® SC-75
Package
- Small Footprint Area
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
• Find out more about Vishay’s Medical Products at:
www.vishay.com/medical-mosfets
APPLICATION EXAMPLES
• Medical Implantable Applications Including
- Drug Delivery Systems
- Defibrillators
- Pacemakers
- Hearing Aids
- Other Implantable Devices
• Load Switch, PA Switch and Battery Switch for Portable
Devices
• DC/DC Converter
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
PowerPAK SC-75
SMMB912DK-T1-GE3
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
TC = 25 °Ca
TC = 70 °Ca
TA = 25 °Cb, c
TA = 70 °Cb, c
VGS
ID
Pulsed Drain Current
Continuous Source-Drain Diode Current
TC = 25 °Ca
TA = 25 °Cb, c
IDM
IS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °Cb, c
TA = 70 °Cb, c
PD
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)c, d
TJ, Tstg
LIMIT
20
±8
1.5
1.5
1.5
1.4
5
1.5
0.9
3.1
2.0
1.1
0.7
- 55 to + 150
260
UNIT
V
A
W
°C
Document Number: 65459
S09-2018-Rev. A, 05-Oct-09
www.vishay.com
1
1 page  
New Product
SMMB912DK
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
10
Limited by RDS(on)*
4
100 µs
1
0.1
TA = 25 °C
Single Pulse
BVDSS Limited
1 ms
10 ms
100 ms
1 s, 10 s
DC
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
4
3
2
1
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power Derating, Junction-to-Case
3
2
Package Limited
1
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
1.5
1.2
0.9
0.6
0.3
0.0
0
25 50 75 100 125
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65459
S09-2018-Rev. A, 05-Oct-09
www.vishay.com
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SMMB912D.PDF ] | |
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