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PDF PMPB29XPE Data sheet ( Hoja de datos )
| Número de pieza | PMPB29XPE | |
| Descripción | single P-channel Trench MOSFET | |
| Fabricantes | NXP Semiconductors | |
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PMPB29XPE
20 V, single P-channel Trench MOSFET
5 December 2012
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
• 2.3 kV ESD protected
• Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
• Exposed drain pad for excellent thermal conduction
• Tin-plated 100 % solderable side pads for optical solder inspection
1.3 Applications
• Charging switch for portable devices
• DC-to-DC converters
• Power management in battery-driven portable devices
• Hard disk and computing power management
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = -4.5 V; Tamb = 25 °C
VGS = -4.5 V; ID = -5 A; Tj = 25 °C
Min Typ Max Unit
- - -20 V
-12 -
12 V
[1] - - -5 A
- 28 32.5 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
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NXP Semiconductors
PMPB29XPE
20 V, single P-channel Trench MOSFET
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
10
0.02
0.01
0
017aaa542
1
10-3
10-2
FR4 PCB, standard footprint
10-1
1
10 102 103
tp (s)
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 017aaa543
Zth(j-a)
(K/W)
102 duty cycle = 1
0.75
0.33
0.2
10
0.5
0.25
0.1
0.05
0.02
0 0.01
1
10-3
10-2
10-1
FR4 PCB, mounting pad for drain 6 cm2
1
10 102 103
tp (s)
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = -250 µA; VGS = 0 V; Tj = 25 °C
VGSth
gate-source threshold ID = -250 µA; VDS = VGS; Tj = 25 °C
voltage
IDSS drain leakage current VDS = -20 V; VGS = 0 V; Tj = 25 °C
IGSS gate leakage current VGS = -8 V; VDS = 0 V; Tj = 25 °C
PMPB29XPE
All information provided in this document is subject to legal disclaimers.
Product data sheet
5 December 2012
Min Typ Max Unit
-20 - - V
-0.47 -0.68 -0.9 V
- - -1 µA
- - -10 µA
© NXP B.V. 2012. All rights reserved
5 / 14
5 Page 
NXP Semiconductors
11. Revision history
Table 8. Revision history
Data sheet ID
Release date
PMPB29XPE v.1
20121205
PMPB29XPE
20 V, single P-channel Trench MOSFET
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
PMPB29XPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
5 December 2012
© NXP B.V. 2012. All rights reserved
11 / 14
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