Technical Data
DIODE
maximum ratings
Voltage, Reverse (VR)
Voltage, Reverse Peak (VRM)
Current at VR = OV (IO)
Current Average Rectified (IF)
Current Surge Peak (IFM)
Current, Surge (IFM) at tp = 10 ms
Max. Power Dissipation (PT) at TC = °C
Max. Thermal Resistance (Rth J-A)
Max. Junction Temperature (TJ)
600.0 V
720.0 V
empty
A
2.0 A
6.5 A
70.0 A
empty
W
70.0 °C/W
175.0 °C
NO.
TYPE
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CASE
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1N3940
SILICON
CONTROLLED
AVALANCHE
DO-13
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PERFORMANCE CHARACTERISTICS at T = 25°C, unless otherwise noted
C
NO. SYMBOL
CONDITIONS
MIN.
MAX.
UNITS
1. VF
IF = 2.0 A
(1) - 1.1 V
2. IR
VR = 600.0 V
- 5.0 µA
3. IR
VR = 600.0 V, TC = 150.0° C
-
500.0
µA
4. VBR
IR = 50.0 µA
720.0
1400.0
V
5. PRSM
tp = 10.0 µs
- 4.0 kW
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
17.
18.
19.
20.
Notes
(1)pulse-tested tp ≤ 300 µs, duty cycle ≤ 2 %
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DIMENSIONS
in mm
Marking 1N3940
Customer GENERAL PURPOSE
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