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Datasheet 1N5615 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 1N5615 | VOIDLESS-HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION
1N5615 thru 1N5623
VOIDLESS-HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS
WWW.Microsemi .COM
DESCRIPTION
APPEARANCE
This “fast recovery” rectifier diode series is military qualified to MIL-PRF-19500/429 and is ideal for high-reliability applications where a failure | Microsemi | rectifier |
2 | 1N5615 | GLASS PASSIVATED FAST SWITCHING RECTIFIER 1N5615 THRU 1N5623
GLASS PASSIVATED FAST SWITCHING RECTIFIER
Reverse Voltage - 200 to 1000 Volts
DO-204AP
Forward Current - 1.0 Ampere
FEATURES
0.034 (0.86) 0.028 (0.71) DIA. 1.0 (25.4) MIN.
0.240 (6.1) MAX.
0.150 (3.8) 0.100 (2.5) DIA.
♦ High temperature metallurgically bonded construction � | General Semiconductor | rectifier |
3 | 1N5615 | Diode Switching 200V 2A 2-Pin Case G-2 | New Jersey Semiconductor | diode |
4 | 1N5615 | DIODE Technical Data DIODE
maximum ratings
Voltage, Reverse (VR) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Current Surge Peak (IFM) Current, Surge (IFM) at tp = 10 ms Max. Power Dissipation (PT) at TC = °C Max. Thermal Resistance (Rth J-A) Max. Junction Temperat | DSI | diode |
5 | 1N5615-M | DIODE Technical Data DIODE
maximum ratings
Voltage, Reverse (VR) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Current Surge Peak (IFM) Current, Surge (IFM) at tp = 10 ms Max. Power Dissipation (PT) at TC = °C Max. Thermal Resistance (Rth J-A) Max. Junction Temperat | DSI | diode |
1N5 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 1N50 | Diode, Rectifier American Microsemiconductor diode | | |
2 | 1N50 | GOLD BONDED GERMANIUM DIODES New Jersey Semiconductor diode | | |
3 | 1N50 | N-CHANNEL POWER MOSFET 1N50
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
Power MOSFET
1.3A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state re Unisonic Technologies mosfet | | |
4 | 1N50-KW | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
1N50-KW
Preliminary
1A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara Unisonic Technologies mosfet | | |
5 | 1N500 | Diode, Rectifier American Microsemiconductor diode | | |
6 | 1N5000 | Silicon Rectifiers Microsemi Corporation rectifier | | |
7 | 1N5000 | Diode Switching 400V 3A 2-Pin TOP HAT New Jersey Semiconductor diode | |
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Número de pieza | Descripción | Fabricantes | |
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