PSMN1R0-30YLD Datasheet PDF - NXP Semiconductors
Part Number | PSMN1R0-30YLD | |
Description | N-channel MOSFET | |
Manufacturers | NXP Semiconductors | |
Logo | ||
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N-channel 30 V, 1.0 mΩ logic level MOSFET in LFPAK56
using NextPowerS3 Technology
19 September 2014
Product data sheet
1. General description
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.
NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers
high efficiency, low spiking performance usually associated with MOSFETs with an
integrated Schottky or Schottky-like diode but without problematic high leakage current.
NextPowerS3 is particularly suited to high efficiency applications at high switching
frequencies.
2. Features and benefits
• Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching
frequencies
• Superfast switching with soft-recovery; s-factor > 1
• Low spiking and ringing for low EMI designs
• Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at
25 °C
• Optimised for 4.5 V gate drive
• Low parasitic inductance and resistance
• High reliability clip bonded and solder die attach Power SO8 package; no glue, no
wire bonds, qualified to 175 °C
• Wave solderable; exposed leads for optimal visual solder inspection
3. Applications
• On-board DC-to-DC solutions for server and telecommunications
• Secondary-side synchronous rectification in telecommunication applications
• Voltage regulator modules (VRM)
• Point-of-Load (POL) modules
• Power delivery for V-core, ASIC, DDR, GPU, VGA and system components
• Brushed and brushless motor control
• Power OR-ing
4. Quick reference data
Table 1.
Symbol
VDS
ID
Ptot
Quick reference data
Parameter
Conditions
drain-source voltage 25 °C ≤ Tj ≤ 175 °C
drain current
Tmb = 25 °C; VGS = 10 V; Fig. 2
total power dissipation Tmb = 25 °C; Fig. 1
Min Typ Max Unit
- - 30 V
[1] - - 100 A
- - 238 W
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NXP Semiconductors
Symbol
Rth(j-a)
Parameter
thermal resistance
from junction to
ambient
1
Zth(j-mb)
(K/W)
δ = 0.5
0.2
10-1
0.1
0.05
0.02
10-2
single shot
PSMN1R0-30YLD
N-channel 30 V, 1.0 mΩ logic level MOSFET in LFPAK56 using
NextPowerS3 Technology
Conditions
Fig. 5
Fig. 6
Min Typ Max Unit
- 50 - K/W
- 125 - K/W
aaa-008638
P
tp
δ= T
10-3
10-6
10-5
10-4
10-3
10-2
tp
T
t
10-1
1
tp (s)
Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
aaa-005750
aaa-005751
Fig. 5.
PCB layout for thermal resistance junction to
ambient 1” square pad; FR4 Board; 2oz copper
Fig. 6.
PCB layout for thermal resistance junction to
ambient minimum footprint; FR4 Board; 2oz
copper
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
VGS(th)
gate-source threshold ID = 2 mA; VDS = VGS; Tj = 25 °C
voltage
PSMN1R0-30YLD
Product data sheet
All information provided in this document is subject to legal disclaimers.
19 September 2014
Min Typ Max Unit
30 - - V
27 - - V
1.2 1.75 2.2 V
© NXP Semiconductors N.V. 2014. All rights reserved
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