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PDF 10N80 Data sheet ( Hoja de datos )
| Número de pieza | 10N80 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | nELL | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 10N80 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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SEMICONDUCTOR
10N80 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
10A, 800Volts
DESCRIPTION
The Nell 10N80 is a three-terminal silicon device
with current conduction capability of 10A, fast switching
speed, low on-state resistance, breakdown voltage
rating of 800V, and max. threshold voltage of 5 volts.
They are designed for use in applications such as
switched mode power supplies, DC to DC converters,
PWM motor controls, bridge circuits and general
purpose switching applications.
FEATURES
RDS(ON) = 1.1Ω @ VGS = 10V
Ultra low gate charge(58nC max.)
Low reverse transfer capacitance
(CRSS = 15pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
D
G
D
S
TO-3PB
(10N80B)
GDS
TO-220F
(10N80AF)
D (Drain)
G
(Gate)
S (Source)
PRODUCT SUMMARY
ID (A)
VDSS (V)
RDS(ON) (Ω)
QG(nC) max.
10
800
1.1 @ VGS = 10V
58
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
Drain to Source voltage
TJ=25°C to 150°C
VDGR
Drain to Gate voltage
RGS=20KΩ
VGS Gate to Source voltage
ID Continuous Drain Current
TC=25°C
TC=100°C
IDM Pulsed Drain current(Note 1)
IAR Avalanche current(Note 1)
EAR Repetitive avalanche energy(Note 1)
lAR=10A, RGS=50Ω, VGS=10V
EAS Single pulse avalanche energy(Note 2)
lAS=10A, L=17.3mH
dv/dt
Peak diode recovery dv/dt(Note 3)
Total power dissipation
PD
Linear derating factor above TC=25°C
TC=25°C
TC=25°C
TO-3PB
TO-220F
TO-3PB
TO-220F
TJ
TSTG
TL
Operation junction temperature
Storage temperature
Maximum soldering temperature, for 10 seconds
Mounting torque, #6-32 or M3 screw
1.6mm from case
Note: 1.Repetitive rating: pulse width limited by junction temperature.
2.lAS=10A, L=17.3mH, VDD=50V, RGS =25Ω, starting TJ =25°C.
3.ISD ≤ 10A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, starting TJ = 25°C.
VALUE
800
800
±30
10
6.2
40
10
24
920
4
240
37
1.92
0.296
-55 to 150
-55 to 150
300
10 (1.1)
UNIT
V
A
mJ
V /ns
W
°C/W
ºC
lbf.in (N.m)
www.nellsemi.com
Page 1of 6
1 page  
SEMICONDUCTOR
■ TYPICAL CHARACTERISTICS
Fig.1 Drain current vs. Source to drain voltage
10
8
6
4
2
0
0 200 400 600 800 1000
Source to drain voltage, VSD (mV)
10N80 Series RRooHHSS
Nell High Power Products
Fig.2 Drain-source on-state resistance
characteristics
5
VGS = 10V
lD = 5A
4
3
2
1
0
0 1 2 3 45
Drain to Source voltage, VDS (V)
Fig.3 Drain current vs. Gate threshold voltage
3
2.5
2
1.5
1
0.5
0
0 1 23
4
Gate threshold voltage, VGS(TH) (V)
Fig.4 Drain current vs. Drain-Source
breakdown voltage
400
350
300
250
200
150
100
50
0
0
200 400 600 800 1000
Drain-Source breakdown voltage, BVDSS (V)
www.nellsemi.com
Page 5of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 10N80.PDF ] | |
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