Technical Data
TRANSISTOR
maximum ratings
Voltage, Collector to Base (VCBO)
Voltage, Collector to Emitter (VCE)
Voltage, Emitter to Base (VEBO)
Collector Current (IC)
Base Current (IB)
Max. Power Dissipation (PT) at TC = 25 °C
Max. Thermal Resistance (Rth J-C)
Max. Junction Temperature (TJ)
empty
500.0 V
250.0 V
10.0 V
6.0 A
3.0 A
87.5 W
2.0 °C/W
200.0 °C
empty empty
NO.
TYPE
empty
empty
CASE
empty
empty
185T2B
NPN
empty
empty
TO-3
empty
empty
PERFORMANCE CHARACTERISTICS at T = 25°C, unless otherwise noted
C
NO. SYMBOL
CONDITIONS
MIN.
MAX.
UNITS
1. BVCEO
IC = 50.0 mA
(1) 250.0
-
V
2. BVCBO
IE = 3.0 mA
(1) 500.0
-
V
3. ICEO
VCE = 250.0 V
- 1.0 mA
4. ICES
VCE = 400.0 V
- 1.0 mA
5. IEBO
VEB = 10.0 V
- 1.0 mA
6. hFE
IC = 2.0 A, VCE = 4.0 V
(1) 30.0
90.0
-
7. VCE(SAT) IC = 2.0 A, IB = 250.0 mA
(1) - 0.6 V
8. VBE(SAT) IC = 2.0 A, IB = 250.0 mA
(1) - 1.2 V
9. fT
VCE = 15.0 V, IC = 0.5 A, f = 10.0 MHz
10.0 - MHz
10. t(ON)
IC = 5.0 A, IB = 1.0 A
- 1.0 µs
11. tOFF
IC = 5.0 A, IB = 1.0 A
- 6.0 µs
12.
13.
14.
15.
16.
17.
18.
19.
20.
Notes
(1)pulse-tested tp ≤ 300 µs, duty cycle ≤ 2 %
empty
empty
empty
DIMENSIONS
in mm
Marking 185T2B
Customer GENERAL PURPOSE
No Preview Available !

1 page