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PDF PHC21025 Data sheet ( Hoja de datos )
| Número de pieza | PHC21025 | |
| Descripción | Complementary enhancement mode MOS transistors | |
| Fabricantes | Philips | |
| Logotipo |  |
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DISCRETE SEMICONDUCTORS
DATA SHEET
PHC21025
Complementary enhancement
mode MOS transistors
Product specification
Supersedes data of November 1994
File under Discrete Semiconductors, SC13b
1997 Jun 20
1 page  
Philips Semiconductors
Complementary enhancement
mode MOS transistors
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction to soldering point
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
Per channel
V(BR)DSS
VGSth
IDSS
IGSS
drain-source breakdown voltage
N-channel
P-channel
gate-source threshold voltage
VGS = 0; ID = 10 µA
VGS = 0; ID = −10 µA
N-channel
P-channel
drain-source leakage current
VGS = VDS; ID = 1 mA
VGS = VDS; ID = −1 mA
N-channel
P-channel
gate leakage current
N-channel
VGS = 0; VDS = 24 V
VGS = 0; VDS = −24 V
VGS = ±20 V; VDS = 0
P-channel
IDon
RDSon
yfs
Ciss
Coss
on-state drain current
N-channel
VGS = 10 V; VDS = 1 V
VGS = 4.5 V; VDS = 5 V
P-channel
VGS = −10 V; VDS = −1 V
VGS = −4.5 V; VDS = −5 V
drain-source on-state resistance
N-channel
P-channel
forward transfer admittance
VGS = 4.5 V; ID = 1 A
VGS = 10 V; ID = 2.2 A
VGS = −4.5 V; ID = − 0.5 A
VGS = −10 V; ID = −1 A
N-channel
P-channel
input capacitance
VDS = 20 V; ID = 2.2 A
VDS = −20 V; ID = −1 A
N-channel
P-channel
output capacitance
VGS = 0; VDS = 20 V; f = 1 MHz
VGS = 0; VDS = −20 V; f = 1 MHz
N-channel
P-channel
VGS = 0; VDS = 20 V; f = 1 MHz
VGS = 0; VDS = −20 V; f = 1 MHz
Product specification
PHC21025
VALUE
35
UNIT
K/W
MIN. TYP. MAX. UNIT
30 − − V
−30 − − V
1−
−1 −
2.8 V
−2.8 V
− − 100 nA
− − −100 nA
− − ±100 nA
− − ±100 nA
3.5 − − A
2−−A
−2.3 − − A
−1 − − A
− 0.11 0.2 Ω
− 0.08 0.1 Ω
− 0.33 0.4 Ω
− 0.22 0.25 Ω
2 4.5 − S
12−S
− 250 − pF
− 250 − pF
− 140 − pF
− 140 − pF
1997 Jun 20
5
5 Page 
Philips Semiconductors
Complementary enhancement
mode MOS transistors
Product specification
PHC21025
10 2
Rth j-s
(K/W)
10
1
10 1
10 6
δ=
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
10 5
10 4
10 3
10 2
MBE152
P
δ
=
tp
T
tp
T
t
10 1
t p (s)
1
Fig.20 Transient thermal resistance from junction to soldering point as a function of pulse time; typical values.
1997 Jun 20
11
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet PHC21025.PDF ] | |
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